RF3854PCK-410 RFMD, RF3854PCK-410 Datasheet - Page 19

• Manufacturer Part Number: RF3854PCK-410
• Description: KIT EVAL FOR RF3854
• Manufacturer: RFMD
• Type: Modulator, PA Driverr

Specifications of RF3854PCK-410

• Frequency: 800MHz ~ 2GHz
• For Use With/related Products: RF3854
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 689-1053; RF3854PCBA

The baseband inputs of the RF3854 must be driven with balanced signals. Amplitude and phase matching <0.5dB and <0.5
degrees are recommended. Phase or gain imbalances between the complementary input signals will cause additional distor-
tion including some second order baseband distortion.
The RF3854 is designed to be driven with either single-ended or differential LO signals. Driving the chip differentially is benefi-
cial in improving the LO leakage performance. Decreasing the LO drive level will also improve LO leakage, but the output noise
performance will be degraded. Driving the LO level too high will degrade linearity.
The ground lines for the LO sections are brought out of the chip independently from the ground to the RF and modulator sec-
tions. This is intended to give the board design the independence of isolating the LO signals from the RF output sections.
The RF3854 includes frequency doubler and divider modes that allow the LO to operate at half or twice the frequency depend-
ing on the application. This provides some flexibility in improving VCO isolation and LO leakage through frequency translation.
The RF outputs use open collector architecture and may be biased at voltages higher than V
voltage may improve the intermodulation performance. The load resistors are selected to provide sufficient output power while
maintaining good linearity.
The GC DEC and V
are recommended. The purpose of these capacitors is to filter out low frequency noise (20MHz) in the gain control lines that
may cause noise on the RF signal. The capacitor on the GC DEC line will effect the settling time of the step response in power
control voltage. A 1nF capacitor equates to around a 200ns settling time; a 0.5nF capacitor equates to a 100ns settling time.
There is a trade-off between setting time and phase noise as gain control is applied.
As with any RF circuit, the RF3854 is sensitive to PC board layout. The suggested schematic and board layout is included as a
guideline. Proper grounding of the die flag under the chip is essential in achieving acceptable RF performance. A symmetric
output structure will maintain signal balance while keeping the RF lines short will reduce losses. Proper routing and bypassing
of the supply lines will improve stability and performance, especially under low gain control settings where carrier suppression
becomes crucial. The location and value of the bypass capacitor on pin 1 is critical in promoting good carrier suppression and
is designated to resonate out the series wire bond and PC board inductance.
Rev A1 DS070313
REF
output pins should be decoupled to ground. A 10nF capacitor on V
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Application Information
REF
CC
and a 1nF capacitor on GC CEC
. In practice, biasing at a higher
RF3854
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