AMMC-5033-W10 Avago Technologies US Inc., AMMC-5033-W10 Datasheet - Page 7

• Manufacturer Part Number: AMMC-5033-W10
• Description: IC MMIC AMP GAAS 17.7-32GHZ
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of AMMC-5033-W10

• Function: Amplifier
• Gain: 20dB
• Supply Current: 280mA
• Supply Voltage Range: 3.5V, 5V
• Frequency Max: 32GHz
• Frequency Min: 17.7GHz
• Supply Voltage Max: 7V
• Number Of Channels: 1
• Frequency (max): 32GHz
• Output Power: 26.5@32000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (max): 7V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Biasing and Operation
The recommended quiescent DC bias condition for
optimum efficiency, performance, and reliability is
V
I
rangement results in default quiescent drain currents
I
connected to V
If operation with both V
an additional wire bond connection from the V
to V
V
V
be accomplished by setting V
off voltage V
An optional output power detector network is also
provided. Detector sensitivity can be adjusted by bias-
ing the diodes with typically 1 to 5 volts applied to the
Det- bias terminal. Simply connecting Det-Bias to the V
supply is a convenient method of biasing this detector
network. The differential voltage between the Det-Ref
and Det-Out pads can be correlated with the RF power
emerging from the RF output port. The detected volt-
age is given by:
V = (V
Where V
a voltage at the DET_OUT port, and V
put-power offset voltage. There are three methods to
calculate V
1. V
2. V
3. V
With reference to Figure 13, the RF input is DC coupled
to a shunt 50 Ω resistor but it is DC blocked to the input
of the first stage. The RF output is DC blocked to the
output of the second stage, however, it is DC coupled
to the detector bias circuit. If the output detector is
biased using the on-chip optional Det-Bias network,
an external DC blocking capacitor may be required at
the RF Output port.
No ground wires are needed since ground connections
are made with plated through-holes to the backside of
the device.
7
d1
d1
d1
gg
g1
+ I
) will balance the current in each gain stage. V
) can be adjusted for I
ment (by removing or switching off the power source
and measuring V
due to temperature drift of less than 0.0002 dB/°C.
The drift error will be less than 0.25 dB.
stored in a lookup table, or it can be measured at
two temperatures and a linear fit used to calculate
V
close to method #1.
= 280 mA, I
ofs
= 3.5 volts and V
ofs
ofs
ofs
gg
d2
can be measured at a single reference temperature.
ref
can either be characterized over temperature and
can be measured before each detector measure-
at any temperature. This method gives an error
external bypass chip capacitor (shorting V
= 780 mA (no connection to V
ref
- V
ofs
is the voltage at the DET_REF port, V
det
:
p
.
) - V
gg
d2
will bias all gain stages.
ofs
= 500 mA. A single DC gate supply
ref
- V
d2
det
d1
d1
= 5 volts with V
). This method gives an error
and V
+ I
g1
d2
and/or V
= 780 mA. Muting can
d2
at 5 volts is desired,
ofs
g1
gg
). This bias ar-
is the zero-in-
to the pinch-
gg
set for
g1
g1
gg
det
pad
to
(=
d2
is
Assembly Techniques
The backside of the AMMC- 5033 chip is RF ground. For
microstripline applications, the chip should be attached
directly to the ground plane (e.g., circuit carrier or heat-
sink) using electrically conductive epoxy.
For best performance, the topside of the MMIC should
be brought up to the same height as the circuit sur-
rounding it. This can be accomplished by mounting a
gold plated metal shim (same length and width as the
MMIC) under the chip, which is of the correct thickness
to make the chip and adjacent circuit coplanar.
The amount of epoxy used for chip and or shim at-
tachment should be just enough to provide a thin fillet
around the bottom perimeter of the chip or shim. The
ground plane should be free of any residue that may
jeopardize electrical or mechanical attachment.
14. Note that all the RF input and output ports are in
a Ground-Signal-Ground configuration.
RF connections should be kept as short as reasonable to
minimize performance degradation due to undesirable
series inductance. A single bond wire is sufficient for
signal connections, however double-bonding with 0.7
mil gold wire or the use of gold mesh is recommended
for best performance, especially near the high end of
the frequency range.
Thermosonic wedge bonding is the preferred method
for wire attachment to the bond pads. Gold mesh can
be attached using a 2 mil round tracking tool and a
tool force of approximately 22 grams with an ultrasonic
power of roughly 55 dB for a duration of 76 ± 8 mS. A
guided wedge at an ultrasonic power level of 64 dB can
be used for the 0.7 mil wire. The recommended wire
bond stage temperature is 150 ± 2°C.
Caution should be taken to not exceed the Absolute
Maximum Rating for assembly temperature and time.
The chip is 100 µm thick and should be handled
with care. This MMIC has exposed air bridges on the
top surface and should be handled by the edges or
with a custom collet (do not pick up die with vacuum
on die center.)
This MMIC is also static sensitive and ESD handling
precautions should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is recommended.
2. Eutectic attach is not recommended and may jeopardize reliability
of the device.
The location of the RF bond pads is shown in Figure
[1,2]