AMMC-5033-W10 Avago Technologies US Inc., AMMC-5033-W10 Datasheet - Page 2

• Manufacturer Part Number: AMMC-5033-W10
• Description: IC MMIC AMP GAAS 17.7-32GHZ
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of AMMC-5033-W10

• Function: Amplifier
• Gain: 20dB
• Supply Current: 280mA
• Supply Voltage Range: 3.5V, 5V
• Frequency Max: 32GHz
• Frequency Min: 17.7GHz
• Supply Voltage Max: 7V
• Number Of Channels: 1
• Frequency (max): 32GHz
• Output Power: 26.5@32000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (max): 7V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

AMMC-5033 DC Specifications/Physical Properties
Symbol
I
I
Vgg
DETBias
θ
θ
Notes:
1. Backside temperature T
2. Channel-to-backside Thermal Resistance (θch-b) = 42°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resis-
AMMC-5033 RF Specifications
Tb = 25°C, V
Symbol
Gain
P
P
OIP
RL
RL
Isolation
Notes:
4. Data measured in wafer form T
5. 100% on-wafer RF test is done at frequency = 17.7, 21, 26.5 and 32 GHz.
6. 100% on-wafer test frequency = 17.7, 26.5 and 32 GHz.
2
d1
d2
c1(ch-bs)
c2(ch-bs)
-1dB
-3dB
tance at backside temperature (Tb) = 25°C calculated from measured data.
in
out
3
Parameters and
Test Condition
Small-Signal Gain
Output Power at 1dB Gain
Compression
Output Power at 3dB Gain
Compression
Output Third Order Intercept
Point;
Pin = +2 dBm
Input Return Loss
Output Return Loss
Min. Reverse Isolation
d1
= 3.5 V, V
[6]
; ∆f = 2 MHz;
Parameters and Test Conditions
First Stage Drain Supply Current
(V
Second Stage Drain Supply Current
(V
Gate Supply Operating Voltage
(I
Detector Bias Voltage (Optional)
First Stage Thermal Resistance
(Backside Temperature, Tb = 25°C)
Second Stage Thermal Resistance
(Backside Temperature, Tb = 25°C)
d1(Q)
d1
d2
b
= 25°C unless otherwise noted.
= 3.5 V, V
= 5 V, V
d2
[6]
[6]
+ I
= 5 V, I
d2(Q)
[5]
[5]
b
[5]
= 25°C.
[4, 5]
g1
= 780 (mA))
g1
= Open, V
d1(Q)
= Open, V
= 280 mA, I
gg
Unit
dB
dB
dB
dBm
dB
dB
dB
gg
set for I
set for I
[2]
d2(Q)
Min.
20
23.5
27
11.5
14
d2
[2, 3]
Lower Band
Specifications
(17.7 - 21 GHz)
[1]
= 500 mA, Zo = 50 Ω
Typical)
d2
Typical)
Typ.
22
25
27
29
13.5
20
47
Max.
Specifications
(21 - 26.5 GHz)
Min.
17.5
25.5
29
11
14
Mid Band
Units
mA
V
V
V
°C/W
°C/W
Typ.
20
27
28
32
13
19
48
(26.5 - 32 GHz)
Max.
Min.
-0.95
Specifications
Min.
16.5
25
29
11
15
Upper Band
Typ.
280
500
-0.6
Vd2
31
19
Typ.
18.5
26.5
27
32
13
22
46
Max.
320
-0.4
Max.