MW5IC970NBR1 Freescale Semiconductor, MW5IC970NBR1 Datasheet - Page 2

• Manufacturer Part Number: MW5IC970NBR1
• Description: IC PWR AMP RF 28V 70W TO-272-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW5IC970NBR1

• Current - Supply: 80mA
• Frequency: 800MHz ~ 900MHz
• Gain: 30dB
• Package / Case: TO-272-16
• Rf Type: General Purpose
• Voltage - Supply: 28V
• Number Of Channels: 1
• Frequency (max): 900MHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 28V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

MW5IC970NBR1 MW5IC970GNBR1
2
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f1 = 870.0 MHz, f2 = 870.1 MHz
Typical 800/900 MHz Performances (In Freescale 800/900 MHz Reference Fixture, 50 ohm system) V
650 mA, 740-870 MHz, 870-960 MHz
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Per JESD22-A113, IPC/JEDEC J-STD-020
Power Gain
Drain Efficiency
Input Return Loss
Intermodulation Distortion
Gain Flatness in 30 MHz Bandwidth @ P
Gain Flatness in 30 MHz Instantaneous Bandwidth
Delay @ P
Part-to-Part Phase Variation @ P
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Final Application
(P
EDGE Application
(P
@ P
Select Documentation/Application Notes - AN1955.
out
out
out
= 70 W CW)
= 35 W CW)
= 70 W CW
out
= 70 W CW Including Output Matching
Characteristic
Test Methodology
Test Methodology
Characteristic
out
= 70 W CW
Rating
(T
out
A
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 25°C unless otherwise noted)
= 70 W CW
DQ
DQ
DQ
DQ
DD
= 80 mA
= 650 mA
= 80 mA
= 650 mA
= 28.5 Vdc, I
Symbol
Delay
IMD
G
IRL
ΔΦ
η
G
G
ps
D
F
F
Rating
DQ1
3
= 80 mA, I
26.5
Min
40
—
—
—
—
—
—
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
Package Peak Temperature
DQ2
= 650 mA, P
DD
Typ
-12
-33
±15
0.2
4.5
30
48
2
= 28 Vdc, I
1A (Minimum)
260
IV (Minimum)
A (Minimum)
-65 to +150
-0.5, +65
-0.5, +15
Value
Class
Value
out
150
200
5.2
0.8
5.3
0.8
Freescale Semiconductor
= 70 W PEP,
(1)
DQ1
Max
34.5
-10
-28
—
—
—
—
—
= 80 mA, I
RF Device Data
°C/W
Unit
Unit
Unit
DQ2
Vdc
Vdc
dBc
Unit
dB
dB
dB
dB
°C
°C
°C
ns
%
°C
°
=