RF5110GTR7 RFMD, RF5110GTR7 Datasheet - Page 20
![IC GSM POWER AMP 3V 16-QFN](/photos/14/3/140317/689-16-qfn_3x3_sml.jpg)
RF5110GTR7
Manufacturer Part Number
RF5110GTR7
Description
IC GSM POWER AMP 3V 16-QFN
Manufacturer
RFMD
Datasheet
1.RF5110GTR7.pdf
(22 pages)
Specifications of RF5110GTR7
Current - Supply
15mA ~ 335mA
Frequency
800MHz ~ 950MHz
Gain
32dB
Package / Case
16-VFQFN Exposed Pad
Rf Type
GSM, GPRS
Voltage - Supply
2.7 V ~ 4.8 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
P1db
-
Test Frequency
-
Other names
689-1030-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RF5110GTR7
Manufacturer:
ON
Quantity:
36 000
RF5110G
20 of 22
40
39
38
37
36
35
34
33
32
31
30
29
28
27
48
46
44
42
40
38
36
34
32
30
28
27
26
RF5110G 450 MHz Gain and Efficiency Versus P
RF5110G 865 MHz to 928 MHz Gain and Efficiency Versus P
865 MHz gain 2.8V
928 MHz gain 2.8V
865 MHz gain 3.3V
928 MHz gain 3.3V
865 MHz gain 3.6V
928 MHz gain 3.6V
865 MHz eff 2.8V
928 MHz eff 2.8V
865 MHz eff 3.3V
928 MHz eff 3.3V
865 MHz eff 3.6V
928 MHz eff 3.6V
27
28
28
29
29
P
30
30
OUT
P
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
IN
(dBm)
(dBm)
31
31
32
32
33
2.8 V gain
3.3 V gain
2.8 V eff
3.3 V eff
OUT
OUT
34
33
/V
CC
/V
CC
35
60
55
50
45
40
35
30
25
20
15
10
5
0
34
55
50
45
40
35
30
25
20
15
10
160
158
156
154
152
150
148
146
144
142
140
138
136
134
132
130
128
126
124
122
120
158
156
154
152
150
148
146
144
142
140
138
136
134
132
130
128
27
26
RF5110G 450 MHz Junction Temperature Versus P
27
28
RF5110G 865 MHz to 928 MHz Junction Temperature Versus P
28
Ambient Temperature = 85°C
29
29
Ambient Temperature = 85°C
30
P
30
P
OUT
IN
(dBm)
(dBm)
31
31
32
32
33
OUT
Rev A4 DS071026
/V
2.8V 865 MHz
2.8V 928 MHz
3.3V 865 MHz
3.3V 928 MHz
3.6V 865 MHz
3.6V 928 MHz
OUT
CC
33
2.8 V
3.3 V
34
/V
CC
35
34