RF5110GTR7 RFMD, RF5110GTR7 Datasheet - Page 13
![IC GSM POWER AMP 3V 16-QFN](/photos/14/3/140317/689-16-qfn_3x3_sml.jpg)
RF5110GTR7
Manufacturer Part Number
RF5110GTR7
Description
IC GSM POWER AMP 3V 16-QFN
Manufacturer
RFMD
Datasheet
1.RF5110GTR7.pdf
(22 pages)
Specifications of RF5110GTR7
Current - Supply
15mA ~ 335mA
Frequency
800MHz ~ 950MHz
Gain
32dB
Package / Case
16-VFQFN Exposed Pad
Rf Type
GSM, GPRS
Voltage - Supply
2.7 V ~ 4.8 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
P1db
-
Test Frequency
-
Other names
689-1030-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RF5110GTR7
Manufacturer:
ON
Quantity:
36 000
Rev A4 DS071026
VAPC
RF IN
VAPC
VCC1
VCC2
J3
J1
+
10 nF
3.3 μF
50 Ω μstrip
50 Ω μstrip
C21
C2
1 nF
10 nF
C3
C5
10 Ω Ferrite
27 pF
1 nF
C19
C6
L2
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
11 nH
180 Ω
13 pF
C20
1.6 nH
L1
56 pF
R1
C1
L6
10 nF
33 pF
C17
C7
1
2
3
4
Evaluation Board Schematic
GSM850 Lumped Element
16
5
15
6
10 nF
C16
14
1.5 pF
7
C8
13
8
12
11
10
9
33 pF
C15
VCC
60 mils
C9 and C10 share
the same pad.
8.8 nH
15 pF
L3
C9
VCC
33 pF
3.3 μF
1 nF
C13
C14
C18
C10
2 pF
65 mils
1.8 nH
L4
P1-1
P1-2
40 mils
9.1 pF
C11
CON4
P1
1
2
3
4
RF5110G
56 pF
C12
VCC
VCC
GND
GND
50 Ω μstrip
P2-1
CON3
P2
1
2
3
VAPC
GND
GND
13 of 22
RF OUT
J2