RF5110GTR7 RFMD, RF5110GTR7 Datasheet - Page 19

• Manufacturer Part Number: RF5110GTR7
• Description: IC GSM POWER AMP 3V 16-QFN
• Manufacturer: RFMD

Specifications of RF5110GTR7

• Current - Supply: 15mA ~ 335mA
• Frequency: 800MHz ~ 950MHz
• Gain: 32dB
• Package / Case: 16-VFQFN Exposed Pad
• Rf Type: GSM, GPRS
• Voltage - Supply: 2.7 V ~ 4.8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Other names: 689-1030-2

Rev A4 DS071026
40
38
36
34
32
30
28
26
24
22
20
49
47
45
43
41
39
37
35
33
31
29
27
25
27.5
26
RF5110G 153 MHz Gain and Efficiency Versus P
RF5110G 220 MHz Gain and Efficiency Versus P
28.0
27
28.5
28
29.0
29
29.5
P
P
30
OUT
OUT
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30.0
(dBm)
(dB)
31
30.5
32
31.0
153 MHz gain 3.6 V
153 MHz gain 3.3 V
153 MHz gain 3.0 V
153 MHz eff 3.6 V
153 MHz eff 3.3 V
153 MHz eff 3.0 V
33
31.5
2.8 V gain
3.3 V gain
3.6 V gain
2.8 V eff
3.3 V eff
3.6 V eff
OUT
OUT
32.0
34
/V
/V
CC
CC
32.5
35
80
75
70
65
60
55
50
45
40
35
30
60
55
50
45
40
35
30
25
20
15
10
5
0
142
140
138
136
134
132
130
128
126
124
122
120
160
155
150
145
140
135
130
125
120
115
110
105
100
27.5
26
RF5110G 153 MHz Junction Temperature Versus P
RF5110G 220 MHz Junction Temperature Versus P
28.0
27
28.5
28
Ambient Temperature = 85°C
Ambient Temperature = 85°C
29.0
29
29.5
P
P
OUT
30
OUT
30.0
(dBm)
(dBm)
31
30.5
RF5110G
32
31.0
153 MHz 3.6 V
153 MHz 3.3 V
153 MHz 3.0 V
33
31.5
OUT
OUT
32.0
2.8 V
3.3 V
3.6 V
34
/V
/V
CC
CC
19 of 22
32.5
35