MGA-565P8-TR1 Avago Technologies US Inc., MGA-565P8-TR1 Datasheet - Page 2

IC AMP BUFFER RFIC 2GHZ 8-LPCC

MGA-565P8-TR1

Manufacturer Part Number
MGA-565P8-TR1
Description
IC AMP BUFFER RFIC 2GHZ 8-LPCC
Manufacturer
Avago Technologies US Inc.
Type
Buffer Amplifierr
Datasheet

Specifications of MGA-565P8-TR1

Package / Case
8-LPCC
Current - Supply
67mA
Frequency
0Hz ~ 3.5GHz
Gain
21.8dB
Rf Type
Cellular, PCS
Test Frequency
2GHz
Voltage - Supply
3 V ~ 5 V
Mounting Style
SMD/SMT
Technology
Buffer Amplifier
Number Of Channels
1
Operating Frequency
3500 MHz
Operating Supply Voltage
8 V
Supply Current
67 mA (Typ) @ 5V
Maximum Power Dissipation
448 mW
Manufacturer's Type
Buffer Amplifier
Frequency (max)
3.5GHz
Operating Supply Voltage (max)
8V
Package Type
LPCC
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
P1db
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
516-1827-2
MGA-565P8-TR1

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MGA-565P8-TR1
Manufacturer:
AVAGO
Quantity:
9 146
Part Number:
MGA-565P8-TR1
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Company:
Part Number:
MGA-565P8-TR1
Quantity:
72
Part Number:
MGA-565P8-TR1G
Manufacturer:
AVAGO
Quantity:
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MGA-565P8 Absolute Maximum Ratings
V
P
P
T
T
θ
Electrical Specifications
T
Symbol
P
I
ISL
Gain
I
RL
Notes:
1. Typical value determined from a sample size of 500 parts from 3 wafers.
2. Measurement obtained using production test board described in the block diagram below. Circuit losses have been de-embedded from
Figure 1. Production Test Circuit Schematic at 2 GHz.
2
Symbol
dsat
ds
A
CH
d
diss
in
STG
ch_b
sat
= 25°C, Frequency = 2 GHz, R
[1]
max.
[1]
actual measurements.
22 pF
Parameter and Test Condition
Saturated Power at 0 dBm input
Saturation Current
Reverse Isolation
Small Signal Gain
Small Signal Current (P
Return Loss
2
0 Ohm
Parameter
DC Supply Voltage
Total Power Dissipation
RF Input Power (Vd = 5V)
Channel Temperature
Storage Temperature
Thermal Resistance
ESD (Human Body Model)
ESD (Machine Model)
1
Amplifier
5
Buffer
3
4
6
8
Output
Input
bias
= 0Ω (unless specified otherwise)
7
[3]
in
12 nH
R
= -10 dBm)
bias
[2]
22 pF
1000 pF
[1]
Units
V
mW
dBm
°C
°C
°C/W
V
V
Vd = 5V
Vd = 3V
Vd = 5V
Vd = 3V
Vd = 3V
Vd = 5V
Vd = 5V
Vd = 3V
22 pF
[1]
[1]
[1]
[1]
+
5V
Absolute
Maximum
8
448
15
150
-65 to 150
91
100
30
Units
dBm
dBm
mA
mA
dB
dB
mA
dB
Notes:
1. Operation of this device in excess of
2. Board (package belly) temperature T
3. Channel-to-board thermal resistance
Min.
18.5
58
42
20
33
any one of these parameters may cause
permanent damage.
25°C. Derate 11 mW/°C for T
measured using 150°C Liquid Crystal
Measurement method.
Typ.
20
17
67
45
50
21.8
20
37
27
-8
-10
Max.
23.5
B
> 109°C.
B
is

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