STB28NM50N STMicroelectronics, STB28NM50N Datasheet - Page 5

• Manufacturer Part Number: STB28NM50N
• Description: MOSFET N-CH 500V 21A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB28NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 158 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1735pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.158 Ohms
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 21 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 50 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10704-2

STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
2
Electrical characteristics
(T
Table 5.
Table 6.
1. C
2. C
C
V
C
Symbol
Symbol
R
CASE
V
(BR)DSS
oss(er)
oss(tr)
I
I
0 to 80% V
0 to 80% V
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
Q
R
oss(tr)
oss(er)
oss
rss
iss
gs
gd
g
g
=25°C unless otherwise specified)
(1)
(2)
is a constant capacitance value that gives the same charging time as C
is a constant capacitance value that gives the same stored energy as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance time related
Equivalent output
capacitance energy related
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
DSS
DSS
On/off states
Dynamic
.
.
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 17432 Rev 1
I
V
V
V
V
V
V
V
V
V
V
(see
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DD
= 1 mA, V
= max rating
= max rating, @125 °C
= ± 20 V
= V
= 10 V, I
= 25 V, f = 1 MHz,
= 0
= 0, V
= 400 V, I
= 10 V,
Figure
Test conditions
Test conditions
GS
, I
DS
18)
GS
D
D
= 0 to 50 V
= 250 µA
D
= 10.5 A
= 0
= 21 A,
Electrical characteristics
oss
oss
Min.
500
Min.
2
while V
while V
-
-
-
-
-
0.135 0.158
Typ.
1735
Typ.
122
122
4.3
9.5
2.7
86
50
25
DS
DS
3
is rising from
is rising from
Max. Unit
Max. Unit
100
10
1
4
-
-
-
-
-
nC
nC
nC
pF
pF
pF
pF
µA
µA
nA
Ω
5/18
V
V
Ω