STB28NM50N STMicroelectronics, STB28NM50N Datasheet - Page 14

• Manufacturer Part Number: STB28NM50N
• Description: MOSFET N-CH 500V 21A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB28NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 158 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1735pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.158 Ohms
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 21 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 50 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10704-2

Package mechanical data
14/18
Dim.
øR
A1
øP
b1
b2
L1
L2
A
D
E
S
b
c
e
L
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Doc ID 17432 Rev 1
19.85
15.45
14.20
TO-247 mechanical data
Min.
4.85
2.20
0.40
3.70
3.55
4.50
2.0
3.0
1.0
18.50
mm.
Typ.
5.45
5.50
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50