STP60N3LH5 STMicroelectronics, STP60N3LH5 Datasheet - Page 5
![MOSFET N-CH 30V 48A TO-220](/photos/29/5/290504/to-220_sml.jpg)
STP60N3LH5
Manufacturer Part Number
STP60N3LH5
Description
MOSFET N-CH 30V 48A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Specifications of STP60N3LH5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.4 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8.8nC @ 5V
Input Capacitance (ciss) @ Vds
1350pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0114 Ohms
Forward Transconductance Gfs (max / Min)
1.1 V
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
48 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
8.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10713-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STD60N3LH5, STP60N3LH5, STU60N3LH5
Table 6.
Table 7.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
t
t
I
I
d(on)
d(off)
V
SDM
RRM
I
Q
t
SD
t
t
SD
r
f
rr
rr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (resistive load)
Source drain diode
Parameter
Parameter
Doc ID 14079 Rev 3
(1)
V
R
(Figure 13
Figure
V
R
(Figure 13
Figure
I
I
di/dt =100 A/µs,
V
SD
SD
DD
DD
G
G
DD
=4.7 Ω, V
=4.7 Ω, V
=24 A, V
=48 A,
=10 V, I
=10 V, I
Test conditions
Test conditions
=20 V,
18)
18)
and
and
(Figure
D
D
GS
= 24 A,
GS
= 24 A,
GS
=0
= 10 V
= 10 V
15)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
18.5
4.2
33
19
1.5
25
6
Max.
Max.
192
1.1
48
-
-
Unit
Unit
nC
ns
ns
ns
ns
ns
5/16
A
A
V
A