STP60N3LH5 STMicroelectronics, STP60N3LH5 Datasheet - Page 4
![MOSFET N-CH 30V 48A TO-220](/photos/29/5/290504/to-220_sml.jpg)
STP60N3LH5
Manufacturer Part Number
STP60N3LH5
Description
MOSFET N-CH 30V 48A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Specifications of STP60N3LH5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.4 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8.8nC @ 5V
Input Capacitance (ciss) @ Vds
1350pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0114 Ohms
Forward Transconductance Gfs (max / Min)
1.1 V
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
48 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
8.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10713-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
I
Q
Q
I
C
GS(th)
DS(on)
C
C
Q
Q
DSS
GSS
R
Q
oss
gs1
gs2
iss
rss
gs
gd
G
g
= 25 °C unless otherwise specified)
Drain-source breakdown
Voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V
charge
Post V
charge
Gate input resistance
Static
Dynamic
DS
= 0)
th
th
gate-to-source
Parameter
Parameter
gate-to-source
GS
= 0)
Doc ID 14079 Rev 3
V
V
V
V
(Figure
V
V
(Figure
f=1 MHz gate bias
Bias= 0 test signal
level=20 mV
open drain
I
V
V
V
V
V
SMD version
V
V
SMD version
V
D
DS
GS
DD
GS
DD
GS
GS
GS
GS
GS
GS
DS
DS
DS
= 250 µA, V
=0
=15 V, I
=15 V, I
= V
= 10 V, I
= 10 V, I
= 5 V, I
= 5 V, I
=25 V, f=1 MHz,
=5 V
=5 V
Test conditions
Test conditions
= 30 V
= 30 V,Tc = 125 °C
= ± 22 V
GS
14)
19)
STD60N3LH5, STP60N3LH5, STU60N3LH5
, I
D
D
D
D
D
D
D
= 24 A
= 24 A
= 48 A
= 48 A
= 24 A
= 24 A
= 250 µA
GS
= 0
Min.
Min.
30
1
-
-
-
-
0.0092 0.0114
0.0072
0.0076 0.0084
0.0088
1350
Typ.
Typ.
265
1.8
8.8
4.7
2.2
2.2
2.5
1.1
32
0.008
0.011
Max.
Max.
±
100
10
1
3
-
-
-
-
Unit
Unit
nC
nC
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
V
V
Ω
Ω
Ω
Ω