SIR880DP-T1-GE3 Vishay, SIR880DP-T1-GE3 Datasheet - Page 3
![MOSFET N-CH D-S 80V 8-SOIC](/photos/29/5/290572/powerpak12128_sml.jpg)
SIR880DP-T1-GE3
Manufacturer Part Number
SIR880DP-T1-GE3
Description
MOSFET N-CH D-S 80V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SIR880DP-T1-GE3.pdf
(7 pages)
Specifications of SIR880DP-T1-GE3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Input Capacitance (ciss) @ Vds
2440pF @ 40V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Gate Charge Qg
49 nC
Minimum Operating Temperature
- 55 C
Resistance Drain-source Rds (on)
0.007 Ohms
Forward Transconductance Gfs (max / Min)
64 S
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
60 A
Power Dissipation
104 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
8.5mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.2V
Power Dissipation Pd
6.25W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIR880DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR880DP-T1-GE3
Manufacturer:
VISHA
Quantity:
20 000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 65702
S10-2683-Rev. B, 22-Nov-10
0.010
0.009
0.008
0.007
0.006
0.005
0.004
100
80
60
40
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
V
= 20 A
GS
V
0.5
DS
11
20
= 7.5 V
V
DS
= 40 V
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
I
V
- Total Gate Charge (nC)
D
GS
DS
Gate Charge
- Drain Current (A)
1.0
22
40
= 10 V thru 5 V
= 20 V
V
V
GS
GS
1.5
33
60
= 4 V
= 4.5 V
V
DS
V
= 60 V
V
GS
GS
2.0
44
80
= 3 V
= 10 V
100
2.5
55
4500
3600
2700
1800
900
2.1
1.8
1.5
1.2
0.9
0.6
10
8
6
4
2
0
0
- 50
0
0
C
C
C
I
oss
D
rss
iss
On-Resistance vs. Junction Temperature
= 20 A
- 25
V
16
1
T
DS
T
V
T
J
Transfer Characteristics
C
0
GS
C
- Junction Temperature (°C)
T
- Drain-to-Source Voltage (V)
= - 55 °C
= 125 °C
C
- Gate-to-Source Voltage (V)
V
= 25 °C
GS
Capacitance
25
32
2
= 4.5 V
50
V
GS
Vishay Siliconix
48
= 10 V
3
75
SiR880DP
100
www.vishay.com
64
4
125
150
80
5
3