SIR880DP-T1-GE3 Vishay, SIR880DP-T1-GE3 Datasheet - Page 2
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SIR880DP-T1-GE3
Manufacturer Part Number
SIR880DP-T1-GE3
Description
MOSFET N-CH D-S 80V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SIR880DP-T1-GE3.pdf
(7 pages)
Specifications of SIR880DP-T1-GE3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Input Capacitance (ciss) @ Vds
2440pF @ 40V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Gate Charge Qg
49 nC
Minimum Operating Temperature
- 55 C
Resistance Drain-source Rds (on)
0.007 Ohms
Forward Transconductance Gfs (max / Min)
64 S
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
60 A
Power Dissipation
104 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
8.5mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.2V
Power Dissipation Pd
6.25W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIR880DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR880DP-T1-GE3
Manufacturer:
VISHA
Quantity:
20 000
SiR880DP
Vishay Siliconix
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
b
a
a
a
J
= 25 °C, unless otherwise noted)
a
V
Symbol
V
R
V
GS(th)
I
t
t
t
t
I
I
C
V
D(on)
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
I
DSS
Q
DS
g
Q
R
I
SM
t
t
t
oss
t
t
t
t
DS
rss
SD
iss
S
rr
fs
gs
gd
a
b
r
f
r
f
g
rr
g
/T
/T
J
J
I
F
V
V
V
V
I
= 20 A, dI/dt = 100 A/µs, T
V
I
D
D
DS
DS
DS
DS
DS
20 A, V
20 A, V
= 40 V, V
= 40 V, V
V
= 80 V, V
= 40 V, V
V
= 40 V, V
V
V
V
V
V
DS
V
V
V
V
DS
GS
DS
DS
GS
GS
GS
DS
DD
DD
Test Conditions
= 0 V, V
= V
= 0 V, I
= 80 V, V
5 V, V
= 7.5 V, I
= 4.5 V, I
= 10 V, I
I
= 10 V, I
= 40 V, R
= 40 V, R
T
D
f = 1 MHz
GEN
GEN
C
I
GS
= 250 µA
GS
GS
S
GS
GS
GS
= 25 °C
= 5 A
, I
= 7.5 V, R
= 7.5 V, I
= 4.5 V, I
= 0 V, T
= 10 V, I
= 10 V, R
D
GS
= 0 V, f = 1 MHz
D
GS
= 250 µA
D
D
GS
D
D
= 250 µA
L
L
= ± 20 V
= 20 A
= 20 A
= 20 A
= 15 A
= 10 V
= 2
= 2
= 0 V
J
D
D
D
= 55 °C
g
g
J
= 20 A
= 20 A
= 20 A
= 1
= 1
= 25 °C
Min.
1.2
0.4
80
30
0.0049
0.0054
0.0070
S10-2683-Rev. B, 22-Nov-10
2440
1525
Typ.
- 5.8
37.2
0.75
100
7.6
9.2
2.1
36
64
49
23
12
10
38
11
15
15
37
56
66
23
33
9
Document Number: 65702
0.0059
0.0067
0.0085
± 100
Max.
100
100
120
2.8
4.2
1.1
10
74
56
35
24
20
70
22
30
30
70
18
60
1
mV/°C
Unit
nC
nC
nA
µA
pF
ns
ns
ns
V
V
A
S
A
V