SIR880DP-T1-GE3 Vishay, SIR880DP-T1-GE3 Datasheet
SIR880DP-T1-GE3
Specifications of SIR880DP-T1-GE3
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SIR880DP-T1-GE3 Summary of contents
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... Bottom View Ordering Information: SiR880DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SiR880DP Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 65702 S10-2683-Rev. B, 22-Nov- 1.5 2.0 2.5 0 4500 3600 = 4.5 V 2700 1800 900 100 2.1 1.8 1 1.2 0.9 0 SiR880DP Vishay Siliconix T = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 4 ...
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... SiR880DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.05 0. °C J 0.03 0.02 0.01 0.00 0.8 1 ...
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... T - Case Temperature (°C) C Current Derating* 3.0 2.4 1.8 1.2 0.6 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR880DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...
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... SiR880DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...