SI7145DP-T1-GE3 Vishay, SI7145DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI7145DP-T1-GE3
• Description: MOSFET P-CH D-S 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7145DP-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 413nC @ 10V
• Input Capacitance (ciss) @ Vds: 15660pF @ 15V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Resistance Drain-source Rds (on): 0.0021 Ohms
• Forward Transconductance Gfs (max / Min): 110 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 60 A
• Power Dissipation: 104 W
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 3.75mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -2.3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7145DP-T1-GE3TR

Si7145DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64814.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.1
0.2
Single Pulse
0.05
0.02
Duty Cycle = 0.5
0.2
Duty Cycle = 0.5
0.1
0.02
10
-3
0.05
Single Pulse
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
S09-0872-Rev. A, 18-May-09
= P
t
2
Document Number: 64814
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 54 °C/W
1000
1
0