Si7145DP Vishay Intertechnology, Si7145DP Datasheet

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Si7145DP

Manufacturer Part Number
Si7145DP
Description
Manufacturer
Vishay Intertechnology
Datasheet

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Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 64814
S09-0872-Rev. A, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
- 30
(V)
0.00375 at V
0.0026 at V
8
6.15 mm
D
R
7
DS(on)
D
Si7145DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
GS
GS
D
Bottom View
(Ω)
PowerPAK SO-8
= - 10 V
= - 4.5 V
5
J
D
= 150 °C)
a, c
1
P-Channel 30-V (D-S) MOSFET
S
2
I
- 60
- 60
D
S
(A)
3
d
d
S
5.15 mm
e, f
4
G
A
Q
= 25 °C, unless otherwise noted
129 nC
g
(Typ.)
Steady State
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Adaptor Switch
Definition
- Notebook Computers
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
g
stg
Tested
®
Power MOSFET
Typical
0.9
15
- 55 to 150
- 36.5
- 29.2
- 5.6
6.25
4.0
Limit
- 100
- 60
- 60
- 60
± 20
66.6
Maximum
- 30
- 50
125
104
260
a, b
a, b
a, b
d
d
a, b
a, b
d
1.2
Vishay Siliconix
20
G
P-Channel MOSFET
Si7145DP
www.vishay.com
S
D
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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