SI7145DP-T1-GE3 Vishay, SI7145DP-T1-GE3 Datasheet

MOSFET P-CH D-S 30V 8-SOIC

SI7145DP-T1-GE3

Manufacturer Part Number
SI7145DP-T1-GE3
Description
MOSFET P-CH D-S 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7145DP-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.3V @ 250µA
Gate Charge (qg) @ Vgs
413nC @ 10V
Input Capacitance (ciss) @ Vds
15660pF @ 15V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Resistance Drain-source Rds (on)
0.0021 Ohms
Forward Transconductance Gfs (max / Min)
110 S
Drain-source Breakdown Voltage
- 30 V
Continuous Drain Current
- 60 A
Power Dissipation
104 W
Mounting Style
SMD/SMT
Continuous Drain Current Id
-60A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
3.75mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-2.3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7145DP-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7145DP-T1-GE3
Manufacturer:
Champion
Quantity:
2 140
Part Number:
SI7145DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
310
Part Number:
SI7145DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7145DP-T1-GE3
0
Company:
Part Number:
SI7145DP-T1-GE3
Quantity:
9 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 54 °C/W.
d. Package limited.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 64814
S09-0872-Rev. A, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
- 30
(V)
0.00375 at V
0.0026 at V
8
6.15 mm
D
R
7
DS(on)
D
Si7145DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
GS
GS
D
Bottom View
(Ω)
PowerPAK SO-8
= - 10 V
= - 4.5 V
5
J
D
= 150 °C)
a, c
1
P-Channel 30-V (D-S) MOSFET
S
2
I
- 60
- 60
D
S
(A)
3
d
d
S
5.15 mm
e, f
4
G
A
Q
= 25 °C, unless otherwise noted
129 nC
g
(Typ.)
Steady State
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Adaptor Switch
Definition
- Notebook Computers
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
g
stg
Tested
®
Power MOSFET
Typical
0.9
15
- 55 to 150
- 36.5
- 29.2
- 5.6
6.25
4.0
Limit
- 100
- 60
- 60
- 60
± 20
66.6
Maximum
- 30
- 50
125
104
260
a, b
a, b
a, b
d
d
a, b
a, b
d
1.2
Vishay Siliconix
20
G
P-Channel MOSFET
Si7145DP
www.vishay.com
S
D
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7145DP-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7145DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7145DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S09-0872-Rev. A, 18-May- 1.5 2.0 2.5 20 000 = 4 000 12 000 8000 = 10 V 4000 1.5 1.3 1.1 0.9 0.7 0.5 180 240 300 Si7145DP Vishay Siliconix ° 125 ° °C C 0.0 0.8 1.6 2.4 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si7145DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0 250 µA D 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.015 0.012 °C J 0.009 0.006 0.003 ...

Page 5

... Case Temperature (°C) C Current Derating* 3.0 2.4 1.8 1.2 0.6 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7145DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si7145DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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