SI6467BDQ-T1-GE3 Vishay, SI6467BDQ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI6467BDQ-T1-GE3
• Description: MOSFET P-CH G-S 1.8V 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6467BDQ-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 850mV @ 450µA
• Gate Charge (qg) @ Vgs: 70nC @ 4.5V
• Power - Max: 1.05W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -850mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6467BDQ-T1-GE3TR

Si6467BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0
= 250 µA
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
10
0.1
-2
* V
by R
GS
Safe Operating Area, Junction-to-Case
125
Limited
DS ( on)*
> minimum V
V
DS
150
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
Single Pulse
T
C
10
1
= 25 °C
GS
-1
at which R
DS(on)
1 0
50
40
30
20
10
1
0
is specified
10
10 ms
100 ms
1 s
10 s
DC
-2
Single Pulse Power, Junction-to-Ambient
100
10
-1
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time
A
t
1
= P
S-80682-Rev. D, 31-Mar-08
1
t
Document Number: 72087
2
(s)
DM
Z
th J A
th J A
100
t
t
1
2
(t )
= 100 °C/W
10
600
100