SIA433EDJ-T1-GE3 Vishay, SIA433EDJ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA433EDJ-T1-GE3
• Description: MOSFET P-CH D-S 20V SC-70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIA433EDJ-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 7.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 8V
• Power - Max: 19W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Forward Transconductance Gfs (max / Min): 35 S
• Gate Charge Qg: 50 nC
• Mounting Style: SMD/SMT
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 19 W
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -500mV
• Power Dissipation Pd: 3.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA433EDJ-T1-GE3TR

SiA433EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
5
0
0.001
- 50
0
I
D
I
On-Resistance vs. Gate-to-Source Voltage
D
On-Resistance vs. Junction Temperature
= 2.5 A; T
Single Pulse Power, Junction-to-Ambient
= 7.6 A; T
I
- 25
D
= 7.6 A
0.01
1
V
J
GS
T
0
J
= 25 °C
J
= 25 °C
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
0.1
25
2
I
D
I
Time (s)
D
= 7.6 A; T
50
= 2.5 A; T
1
3
V
75
GS
J
10
J
= 125 °C
= 4.5 V
= 125 °C
100
V
GS
4
100
= 2.5 V
125
1000
150
5
100
0.01
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.1
10
0.1
10
1
- 50
1
0.0
0.1
* V
Limited by R
Single Pulse
Safe Operating Area, Junction-to-Ambient
T
- 25
A
GS
Soure-Drain Diode Forward Voltage
= 25 °C
0.2
> minimum V
V
T
V
J
SD
I
DS
0
D
= 150 °C
DS(on)
= 250 µA
- Source-to-Drain Voltage (V)
- Drain-to-Source Voltage (V)
0.4
T
Threshold Voltage
1
J
25
- Temperature (°C)
*
GS
BVDSS Limited
at which R
0.6
50
S09-2114-Rev. A, 12-Oct-09
Document Number: 65472
75
T
0.8
10
J
DS(on)
= 25 °C
100
is specified
1 ms
10 ms
100 ms
1 s, 10 s
DC
100 µs
1.0
125
100
150
1.2