SIA433EDJ-T1-GE3 Vishay, SIA433EDJ-T1-GE3 Datasheet
SIA433EDJ-T1-GE3
Specifications of SIA433EDJ-T1-GE3
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SIA433EDJ-T1-GE3 Summary of contents
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... 2.05 mm 2.05 mm Part # code 4 Ordering Information: SiA433EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...
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... SiA433EDJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...
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... On-Resistance vs. Drain Current Document Number: 65472 S09-2114-Rev. A, 12-Oct- ° 2 1 2.0 2 SiA433EDJ Vishay Siliconix T = 150 ° ° Gate-to-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage ° 125 ° °C C 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics Total Gate Charge (nC) g Gate Charge www ...
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... SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 7 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0. ° 7 ° 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient www ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65472 S09-2114-Rev. A, 12-Oct- 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA433EDJ Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 ...
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... SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...