SIA433EDJ-T1-GE3 Vishay, SIA433EDJ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIA433EDJ-T1-GE3
• Description: MOSFET P-CH D-S 20V SC-70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIA433EDJ-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 7.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 8V
• Power - Max: 19W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Forward Transconductance Gfs (max / Min): 35 S
• Gate Charge Qg: 50 nC
• Mounting Style: SMD/SMT
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 19 W
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -500mV
• Power Dissipation Pd: 3.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA433EDJ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65472
S09-2114-Rev. A, 12-Oct-09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
0.0
0
0
Gate Current vs. Gate-Source Voltage
0.5
On-Resistance vs. Drain Current
10
V
3
V
V
GS
DS
GS
Output Characteristics
= 1.8 V
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
I
1.0
D
- Drain Current (A)
20
6
V
GS
1.5
V
= 5 V thru 3 V
GS
30
= 4.5 V
9
2.0
V
V
T
V
V
GS
J
GS
GS
GS
40
12
= 25 °C
= 2.5 V
2.5
= 2.5 V
= 2 V
= 1.5 V
3.0
50
15
10
10
10
10
10
10
10
10
10
10
-2
-3
-4
-5
-6
-7
-8
-9
8
6
4
2
0
8
6
4
2
0
0.0
0
0
I
D
V
Gate Current vs. Gate-Source Voltage
DS
= 11 A
T
10
J
3
= 5 V
V
V
= 150 °C
0.5
GS
GS
Transfer Characteristics
Q
g
- Gate-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
V
- Total Gate Charge (nC)
T
DS
C
Gate Charge
20
6
= 125 °C
= 10 V
T
1.0
C
= 25 °C
Vishay Siliconix
T
J
30
9
= 25 °C
SiA433EDJ
V
DS
1.5
T
= 16 V
www.vishay.com
C
12
40
= - 55 °C
2.0
50
15
3