STP5NK60Z STMicroelectronics, STP5NK60Z Datasheet - Page 6
![MOSFET N-CH 600V 5A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP5NK60Z
Manufacturer Part Number
STP5NK60Z
Description
MOSFET N-CH 600V 5A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STD5NK60ZT4.pdf
(14 pages)
Specifications of STP5NK60Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.6 Ohms
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
For Use With
497-6232 - BOARD EVAL ST7LITE1B,STP5NK60Z
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3196-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP5NK60Z
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP5NK60Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STP5NK60ZFP
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP5NK60ZFP
Manufacturer:
ST
Quantity:
20 000
STP5NK60Z - STP5NK60ZFP- STD5NK60Z
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Figure 16: Source-Drain Forward Characteris-
tics
Figure 17: Maximum Avalanche Energy vs
Temperature
Figure 18: Normalized BVdss vs Temperature