STP5NK60Z STMicroelectronics, STP5NK60Z Datasheet - Page 2
![MOSFET N-CH 600V 5A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP5NK60Z
Manufacturer Part Number
STP5NK60Z
Description
MOSFET N-CH 600V 5A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STD5NK60ZT4.pdf
(14 pages)
Specifications of STP5NK60Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.6 Ohms
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
For Use With
497-6232 - BOARD EVAL ST7LITE1B,STP5NK60Z
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3196-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP5NK60Z
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP5NK60Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STP5NK60ZFP
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP5NK60ZFP
Manufacturer:
ST
Quantity:
20 000
STP5NK60Z - STP5NK60ZFP- STD5NK60Z
2/14
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
Thermal Data
(#) When mounted on 1inch² FR-4, 2 Oz copper board.
Table 4: Avalanche Characteristics
Table 5: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
V
Rthj-case
Rthj-amb
Symbol
dv/dt (1)
Symbol
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
≤5A, di/dt ≤200A/µs, V
TOT
I
I
T
T
AR
ISO
stg
DS
GS
AS
GSO
D
D
j
l
( )
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
DD
j
= 25 °C, I
≤ V
(BR)DSS
D
C
GS
, T
= I
Parameter
Parameter
= 25°C
GS
j
j
= 20 kΩ)
≤ T
max)
AR
= 0)
, V
JMAX.
Igs=± 1mA (Open Drain)
DD
C
C
= 25°C
= 100°C
= 50 V)
Test Conditions
TO-220/DPAK
TO-220/DPAK
Min.
30
3.16
0.72
1.39
20
90
5
-
-55 to 150
Max Value
Value
3000
± 30
62.5
600
600
300
Typ.
4.5
220
5
TO-220FP
TO-220FP
3.16 (*)
20 (*)
2500
5 (*)
0.2
25
5
Max.
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
°C
W
mJ
V
V
V
A
A
A
V
V
A
V