NTD4960N-35G ON Semiconductor, NTD4960N-35G Datasheet - Page 4

• Manufacturer Part Number: NTD4960N-35G
• Description: MOSFET N-CH 30V 11.1A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4960N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 15V
• Power - Max: 1.07W
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.1 mOhms
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11.1 A
• Power Dissipation: 1.68 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Fall Time: 4 ns
• Gate Charge Qg: 11 nC
• Rise Time: 20 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD4960N-35GOS

0.040
0.036
0.032
0.028
0.024
0.020
0.016
0.012
0.008
0.004
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
−50
0
10V
2
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
GS
V
= 30 A
−25
DS
V
Figure 1. On−Region Characteristics
3
Figure 5. On−Resistance Variation with
= 10 V
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
T
J
4
0
, JUNCTION TEMPERATURE (°C)
4 V
25
5
2
Temperature
50
Voltage
6
T
J
75
7
= 25°C
3
TYPICAL PERFORMANCE CURVES
100
8
125
9
4
I
T
D
J
= 30 A
= 25°C
http://onsemi.com
150
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
10
175
5
11
4
10000
0.012
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.011
1000
100
60
50
40
30
20
10
10
0
10
2
0
Figure 4. On−Resistance vs. Drain Current and
V
T
Figure 6. Drain−to−Source Leakage Current
V
J
DS
GS
V
= 25°C
V
4
DS
≥ 10 V
GS
= 0 V
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
20
1
6
I
D
, DRAIN CURRENT (AMPS)
T
8
vs. Drain Voltage
J
Gate Voltage
= 25°C
T
30
2
V
J
T
T
V
GS
10
J
J
= 125°C
GS
= 125°C
= 150°C
= 4.5 V
= 10 V
12
3
40
T
14
J
= −55°C
16
50
4
18
20
60
5