NTD4960N-35G ON Semiconductor, NTD4960N-35G Datasheet - Page 2

• Manufacturer Part Number: NTD4960N-35G
• Description: MOSFET N-CH 30V 11.1A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4960N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 15V
• Power - Max: 1.07W
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.1 mOhms
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11.1 A
• Power Dissipation: 1.68 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Fall Time: 4 ns
• Gate Charge Qg: 11 nC
• Rise Time: 20 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD4960N-35GOS

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume terminal length of 110 mils.
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
Q
V
GS(TH)
(BR)DSS
R
t
(BR)DSS
Q
t
d(OFF)
C
C
I
I
G(TOT)
d(ON)
GS(TH)
C
G(TOT)
Q
Q
DSS
GSS
DS(on)
g
G(TH)
T
OSS
RSS
t
t
ISS
FS
GS
GD
r
f
J
/T
/
http://onsemi.com
J
V
V
V
GS
GS
GS
V
V
V
V
= 0 V, f = 1.0 MHz, V
V
= 4.5 V, V
= 10 V, V
V
2
DS
GS
V
V
GS
GS
GS
V
I
DS
D
GS
GS
DS
= 24 V
= 4.5 V
= 15 A, R
= 0 V,
= 10 V
Test Condition
= 4.5 V, V
= 0 V, V
= V
= 0 V, I
= 1.5 V, I
DS
DS
DS
, I
= 15 V, I
D
GS
= 15 V, I
D
G
DS
= 250 mA
D
= 250 mA
= 3.0 W
= ±20 V
= 15 A
= 15 V,
T
T
I
I
I
I
J
D
D
DS
J
D
D
D
D
= 125°C
= 25°C
= 15 A
= 15 A
= 30 A
= 30 A
= 30 A
= 30 A
= 15 V
R
Symbol
qJC−TAB
R
R
R
qJC
qJA
qJA
Min
30
1.5
1300
Typ
6.1
342
169
4.0
25
5.0
6.1
10
1.2
4.0
4.7
22
12
20
15
10
48
11
Value
116.5
74.5
3.5
3
±100
Max
12.7
1.0
10
2.5
8.0
mV/°C
mV/°C
°C/W
Unit
Unit
mW
mW
mA
nA
nC
ns
nC
pF
V
V
S