NTD4960N-35G ON Semiconductor, NTD4960N-35G Datasheet - Page 3
![MOSFET N-CH 30V 11.1A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
NTD4960N-35G
Manufacturer Part Number
NTD4960N-35G
Description
MOSFET N-CH 30V 11.1A IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD4960N-35G.pdf
(7 pages)
Specifications of NTD4960N-35G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 15V
Power - Max
1.07W
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.1 mOhms
Forward Transconductance Gfs (max / Min)
48 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
11.1 A
Power Dissipation
1.68 W
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Fall Time
4 ns
Gate Charge Qg
11 nC
Rise Time
20 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD4960N-35GOS
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTD4960NT4G
NTD4960N−1G
NTD4960N−35G
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume terminal length of 110 mils.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance (Note 5)
Drain Inductance, DPAK
Drain Inductance, IPAK (Note 5)
Gate Inductance (Note 5)
Gate Resistance
Parameter
Device
(T
J
= 25°C unless otherwise specified)
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
L
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
D
G
http://onsemi.com
IPAK Trimmed Lead
(Pb−Free)
(Pb−Free)
(Pb−Free)
V
Package
GS
V
V
DPAK
IPAK
I
3
GS
S
GS
I
D
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 11.5 V, V
= 15 A, R
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
G
DS
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
Min
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
0.0164
Shipping
0.76
13.0
2.49
1.88
3.46
Typ
7.0
3.0
0.9
7.0
6.0
1.0
17
22
4.0
†
Max
1.2
Unit
nH
ns
ns
nC
W
V