SI4500BDY-T1-GE3 Vishay, SI4500BDY-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI4500BDY-T1-GE3
• Description: MOSFET N/P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4500BDY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4500BDY-T1-GE3TR

Document Number: 70880
S-00269—Rev. A, 26-Apr-99
0.01
0.01
0.1
0.1
2
1
2
1
10
10
–4
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
10
–3
10
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
–2
Square Wave Pulse Duration (sec)
New Product
Square Wave Pulse Duration (sec)
10
–2
10
–1
10
1
–1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
www.vishay.com FaxBack 408-970-5600
– T
A
t
1
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
thJA
100
(t)
t
t
1
2
= 73 C/W
Si4500DY
600
10
2-7