ALD110900ASAL Advanced Linear Devices Inc, ALD110900ASAL Datasheet - Page 6

• Manufacturer Part Number: ALD110900ASAL
• Description: MOSFET N-CH 10.6V DUAL 8SOIC
• Manufacturer: Advanced Linear Devices Inc
• Series: THRESHOLD™, EPAD®r

Specifications of ALD110900ASAL

• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 10.6V
• Vgs(th) (max) @ Id: 10mV @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 500 Ohm (Typ) @ 4 V
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Drain-source Breakdown Voltage: 10.6 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1031

ALD110800/ALD110800A/ALD110900/ALD110900A
100000
10000
DRAIN-SOURCE ON CURRENT vs. ON RESISTANCE
1000
V GS(TH) -1
100
0.01
5
4
3
2
1
0
10
0.1
600
500
400
300
100
200
1
0.1
5
4
2
3
0
V GS(TH)
1
0
CURRENT vs. AMBIENT TEMPERATURE
-50
DRAIN SOURCE ON CURRENT, BIAS
T A = 25°C
GATE AND DRAIN SOURCE VOLTAGE
V GS(TH)
DRAIN SOURCE ON CURRENT vs.
-25
V GS(TH) +1
vs. AMBIENT TEMPERATURE
1
GATE LEAKAGE CURRENT
AMBIENT TEMPERATURE (°C)
ON RESISTANCE (KΩ)
V DS =+0.1V
ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx MOSFET FAMILY
OUTPUT VOLTAGE (V)
0
V GS(TH) +1
OUTPUT VOLTAGE
V DS =+10V
(VGS = VDS) (V)
V GS(TH) +2
10
25
V GS(TH) +2
V GS(TH) +3
100
V DS = +10V
I
50
GSS
-25°C
V GS =-4.0V to +5.4V
-55°C
TYPICAL PERFORMANCE CHARACTERISTICS
T
0°C
A
= 25°C
70°C
V GS(TH) +3
75
1000
V GS(TH) +4
V DS =+1V
V DS = +5V
V DS = +1V
V DS =+5V
125°C
100
V GS(TH) +4
10000
V GS(TH) +5
125
Advanced Linear Devices
V
V
V
V
V
V
V GS(TH) +4
V GS(TH) +2
V GS(TH) +3
V GS(TH)
V GS(TH) +1
GS(TH)
GS(TH)
GS(TH)
GS(TH)
GS(TH)
GS(TH)
100
50
+3
+4
+2
+1
-1
-2
-4
0
-1
-3
4
0
3
2
1
V
+0.0
0.1
-50
GS(TH)
0.1
CURRENT vs. AMBIENT TEMPERATURE
V
DRAIN SOURCE ON CURRENT, BIAS
GATE SOURCE VOLTAGE vs. DRAIN
+25°C
GS
Zero Temperature
Coefficient (ZTC)
V
T
DS
A
GATE AND DRAIN SOURCE VOLTAGE
-25
V
DRAIN SOURCE ON CURRENT (µA)
S
= +25°C
D
+0.2
GS(TH)
= 0.5V
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE
1
1
AMBIENT TEMPERATURE
SOURCE ON CURRENT
V
vs. ON - RESISTANCE
DS
I
OFFSET VOLTAGE vs.
DS(ON)
ON - RESISTANCE (KΩ)
0
- 25°C
+125°C
V
T
125°C
V
+0.4
(VGS = VDS) (V)
A
DS
GS(TH)
10
10
T
= +125°C
25
REPRESENTATIVE UNITS
V
A
= 5V
DS
= +125°C
= 0.5V
V
+0.6
50
V
100
GS(TH)
100
V
0.0V ≤ V
GS
DS
= R
75
D
S
ON
V
DS
+0.8
1000
V
T
1000
GS(TH)
V
DS
A
DS
I
• I
≤ 5.0V
DS(ON)
= +25°C
100
DS(ON)
= 5V
V
+1.0
10000
10000
GS(TH)
125
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