ALD110900ASAL Advanced Linear Devices Inc, ALD110900ASAL Datasheet - Page 2
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ALD110900ASAL
Manufacturer Part Number
ALD110900ASAL
Description
MOSFET N-CH 10.6V DUAL 8SOIC
Manufacturer
Advanced Linear Devices Inc
Series
THRESHOLD™, EPAD®r
Datasheet
1.ALD110900APAL.pdf
(11 pages)
Specifications of ALD110900ASAL
Package / Case
8-SOIC (0.154", 3.90mm Width)
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Drain To Source Voltage (vdss)
10.6V
Vgs(th) (max) @ Id
10mV @ 1µA
Power - Max
500mW
Mounting Type
Surface Mount
Minimum Operating Temperature
0 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
500 Ohm (Typ) @ 4 V
Forward Transconductance Gfs (max / Min)
0.0014 S
Drain-source Breakdown Voltage
10.6 V
Gate-source Breakdown Voltage
10.6 V
Continuous Drain Current
12 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1014-1031
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V + = +5V V- = GND T A = 25
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Notes:
ALD110800/ALD110800A/ALD110900/ALD110900A
Gate Threshold Voltage
Offset Voltage
V GS(th)1 -V GS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Parameter
1
Consists of junction leakage currents
1
V
V
GS
DS
1
V GS(th)
V OS
TC VOS
TC VGS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
R DS (ON)
∆R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
Symbol
°
C unless otherwise specified
ALD110800A / ALD110900A
-0.01
Min
10
Typ
+1.6
0.00
12.0
-1.7
500
104
0.0
3.0
1.4
1.8
0.5
2.5
0.1
Advanced Linear Devices
68
10
10
10
60
1
5
5
5
Max
0.01
400
200
2
4
1
ALD110800/ ALD110900
-0.02
Min
10
0.00
+1.6
12.0
Typ
-1.7
500
104
0.0
3.0
1.4
1.8
0.5
2.5
0.1
68
10
10
10
60
2
5
5
5
Max
0.02
400
200
10
4
1
-65°C to +150°C
Unit
V
mV
µV/°C
mV/°C
mA
%
µmho
Ω
KΩ
%
%
V
pA
nA
nA
ns
ns
mmho
pA
pF
pF
dB
0°C to +70°C
500 mW
+260°C
I DS =1µA, V DS = 0.1V
V DS1 = V DS2
I D = 1µA, V DS = 0.1V
I D = 20µA, V DS = 0.1V
I D = 40µA, V DS = 0.1V
V GS = +9.5V, V DS = +5V
V GS = +4.0V, V DS = +5V
V GS = +4.0V
V DS = +9.0V
V GS = +4.0V
V DS = +9.0V
V DS = +0.1V
V GS = +4.0V
V DS = +0.1V
V GS = +0.0V
V DS = +0.1V
V GS = +4.0V
I DS = 1.0µA
V - = V GS = -1.0V
V GS = -1.0V, V DS =+5V
V - = 0V
T A = 125°C
V DS = 0V V GS = +5V
T A =125°C
V + = 5V R L = 5KΩ
V + = 5V R L = 5KΩ
f = 100KHz
Test Conditions
10.6V
10.6V
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