ALD110900ASAL Advanced Linear Devices Inc, ALD110900ASAL Datasheet

ALD110900ASAL

Manufacturer Part Number

ALD110900ASAL

Description

MOSFET N-CH 10.6V DUAL 8SOIC

Manufacturer

Advanced Linear Devices Inc

Series

THRESHOLD™, EPAD®r

Datasheet

1.ALD110900APAL.pdf (11 pages)

Specifications of ALD110900ASAL

Package / Case

8-SOIC (0.154", 3.90mm Width)

Fet Type

2 N-Channel (Dual)

Fet Feature

Standard

Drain To Source Voltage (vdss)

10.6V

Vgs(th) (max) @ Id

10mV @ 1µA

Power - Max

500mW

Mounting Type

Surface Mount

Minimum Operating Temperature

0 C

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

500 Ohm (Typ) @ 4 V

Forward Transconductance Gfs (max / Min)

0.0014 S

Drain-source Breakdown Voltage

10.6 V

Gate-source Breakdown Voltage

10.6 V

Continuous Drain Current

12 mA

Power Dissipation

500 mW

Maximum Operating Temperature

+ 70 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Current - Continuous Drain (id) @ 25° C

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

1014-1031

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ORDERING INFORMATION

GENERAL DESCRIPTION

ALD110800A/ALD110800/ALD110900A/ALD110900 are monolithic quad/

dual N-Channel MOSFETs matched at the factory using ALD’s proven

EPAD CMOS technology. These devices are members of the EPAD

Matched Pair MOSFET Family.

Intended for low voltage, small signal applications, the ALD110800/

ALD110900 features zero threshold voltage, which reduces or eliminates

input to output voltage level shift, including circuits where the signal is

referenced to GND or V+. This feature greatly reduces output signal

voltage level shift and enhances signal operating range, especially for

very low operating voltage environments. With these Zero-Threshold

devices an analog circuit with multiple stages can be constructed to oper-

ate at extremely low supply or bias voltage levels. As an example, an

input amplifier stage operating at 0.2V supply voltage has been demon-

strated.

ALD110800A/ALD110800/ALD110900A/ALD110900 matched pair

MOSFETs are designed for exceptional device electrical characteristics

matching with the threshold voltage set precisely at +0.00V +0.01V, fea-

turing a typical offset voltage of only +0.001V (1mV). As these devices

are on the same monolithic chip, they also exhibit excellent tempco track-

ing characteristics. They are versatile as design components for a broad

range of analog applications such as basic building blocks for current

sources, differential amplifier input stages, transmission gates, and multi-

plexer applications.

Besides matched pair electrical characteristics, each individual MOSFET

also exhibits well controlled parameters, enabling the user to depend on

tight design limits. Even units from different batches and different date

of manufacture have correspondingly well matched characteristics.

These devices are built for minimum offset voltage and differential

thermal response, and they are designed for switching and amplifying

applications in +0.2V to +10V systems where low input bias current, low

input capacitance and fast switching speed are desired. The V

these devices are set at +0.00V, which classify them as both enhance-

ment mode and depletion mode devices. When the gate is set at 0.00V,

the drain current = +1µA @ V

with output voltage level biased at or near input voltage level without volt-

age level shift. These devices exhibit well controlled turn-off and sub-

threshold characteristics of standard enhancement mode MOSFETs.

The ALD110800A/ALD110800/ALD110900A/ALD110900 are MOSFET

devices that feature high input impedance (10

gain (>10

of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA =

100,000,000. For most applications, connect the V+ pin to the most posi-

tive voltage and the V- and N/C pins to the most negative voltage in the

system. All other pins must have voltages within these voltage limits.

* Contact factory for industrial temp. range or user-specified threshold voltage values.

ALD110800ASCL

ALD110800SCL

16-Pin

SOIC

Package

). A sample calculation of the DC current gain at a drain current

0°C to +70°C

INEAR

DVANCED

EVICES,

ALD110800APCL

ALD110800PCL

Operating Temperature Range*

16-Pin

Plastic Dip

Package

NC.

QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD

(“L” suffix for lead free version)

= 0.1V, which allows a class of circuits

ALD110900SAL

ALD110900ASAL ALD110900APAL

SOIC

Package

8-Pin

0°C to +70°C

MATCHED PAIR MOSFET ARRAY

Ω) and high DC current

ALD110900PAL

8-Pin

Plastic Dip

Package

www.aldinc.com

GS(th)

ALD110800/ALD110800A/ALD110900/ALD110900A

™

FEATURES

• Precision zero threshold voltage mode

• Nominal R

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• V

• Positive, zero, and negative V

• Low input capacitance

• Low input/output leakage currents

APPLICATIONS

• Energy harvesting circuits

• Very low voltage analog and digital circuits

• Zero power fail safe circuits

• Backup battery circuits & power failure detector

• Low level voltage clamp & zero crossing detector

• Source followers and buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Analog switches / multiplexers

• Voltage comparators and level shifters

PIN CONFIGURATIONS

GS(th)

N/C*

*N/C pins are internally connected, connect to V-

match (V

DS(ON)

V -

SAL, PAL PACKAGES

SCL, PCL PACKAGES

) to 2mV and 10mV max.

ALD110900

M 4

M 1

ALD110800

=0.00V of 104KΩ

M 2

M 3

M 2

GS(th)

V -

V GS(th) = +0.00V

V -

tempco

V -

N/C*

EPAD

Related parts for ALD110900ASAL

ALD110900ASAL Summary of contents

Page 1

... GS(th) 12 Ω) and high DC current 0°C to +70°C 8-Pin 8-Pin SOIC Plastic Dip Package Package ALD110900ASAL ALD110900APAL ALD110900SAL ALD110900PAL www.aldinc.com ® V GS(th) = +0.00V FEATURES • Precision zero threshold voltage mode • Nominal R @V =0.00V of 104KΩ DS(ON) GS • Matched MOSFET to MOSFET characteristics • ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-Source voltage Gate-Source voltage Power dissipation Operating temperature range SCL, PCL, SAL, PAL package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS + GND T A ...

Page 3

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. ALD’s Electrically Programmable Analog Device (EPAD) ...

Page 4

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY (cont.) SUB-THRESHOLD REGION OF OPERATION Low voltage systems, namely those operating at 5V, 3.3V or less, typically require MOSFETs that have threshold voltage less. The threshold, or turn-on, voltage ...

Page 5

ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx MOSFET FAMILY TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS +25° DRAIN-SOURCE ON VOLTAGE (V) FORWARD TRANSFER CHARACTERISTICS 25° +10V DS V GS(TH) ...

Page 6

ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx MOSFET FAMILY TYPICAL PERFORMANCE CHARACTERISTICS DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 5 -55°C 4 -25°C 3 0° GS(TH GS(TH GS(TH GS(TH) GATE AND DRAIN SOURCE VOLTAGE ...

Page 7

ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx MOSFET FAMILY TYPICAL PERFORMANCE CHARACTERISTICS DRAIN - GATE DIODE CONNECTED VOLTAGE TEMPCO vs. DRAIN SOURCE ON CURRENT 5 -55°C ≤ T ≤ +125°C A 2 100 DRAIN SOURCE ON CURRENT (µA) ZERO TEMPERETURE COEFFICIENT ...

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ALD110900ASAL Advanced Linear Devices Inc, ALD110900ASAL Datasheet

ALD110900ASAL

Specifications of ALD110900ASAL

Related parts for ALD110900ASAL

ALD110900ASAL Summary of contents

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