M30800SAGP#D3 Renesas Electronics America, M30800SAGP#D3 Datasheet - Page 52

• Manufacturer Part Number: M30800SAGP#D3
• Description: MCU 3/5V 0K I-TEMP 100-LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M32C/80r

Specifications of M30800SAGP#D3

• Core Processor: M16C/80
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 45
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -

M
R
R
e
E
3
. v
J
2
Switching Characteristics
Table 5.37 Memory Expansion Mode and Microprocessor Mode
NOTES:
d t
h t
h t
h t
d t
h t
h t
h t
d t
h t
d t
h t
d t
h t
w t
0
C
1
3
B (
B (
(
(
B (
B (
(
(
B (
B (
B (
B (
(
(
(
1 .
8 /
R
W
R
W
D
W
B
S
W
(V
1. Values can be obtained from the following equations, according to BCLK frequency.
2. Values can be obtained from the following equations, according to BCLK frequency and external bus cycles.
C
C
D
C
C
D
C
C
C
C
- B
R
R
R
0
y
R
0
0
L
L
A -
L
L
-
L
L
L
L
A -
-
W
-
C
m
)
0
CC1
K
K
- K
- K
C
- K
- K
- K
- K
D
D
) S
A -
A -
D
R
) S
) B
3
G
C
C
R
R
W
W
N
b
)
)
)
D
D
t
t
t
t
t
8
) S
) S
D
D
l o
R
R
h(WR – DB)
w(WR)
d(DB – WR)
o
h(WR – AD)
h(WR – CS)
o r
)
)
)
)
0 -
)
)
=V
. v
u
1
p
0
1
CC2
, 1
C
C
C
C
R
R
D
D
A
A
A
A
W
W
W
0
=
(when accessing external memory space)
d
d
d
d
D
D
a
a
h
h
h
h
R
R
R
2
a t
a t
d
d
d
d
p i
p i
p i
p i
=3.0 to 3.6V, VSS = 0V at Topr = –20 to 85
S
S
0
e r
e r
e r
e r
S
S
O
=
S -
S -
S -
S -
=
=
=
0
g i
g i
O
O
g i
g i
f
s s
s s
s s
s s
u
5
(BCLK)
e
e
e
e
n
n
u
u
p t
n
n
10 x n
e l
e l
e l
e l
l a
l a
p t
p t
O
O
O
O
l a
l a
f
f
f
10 x m
t u
f
Page 50
(BCLK)
(BCLK)
(BCLK)
t c
t c
t c
t c
9
(BCLK)
t u
t u
u
u
u
u
O
O
9
O
O
p t
p t
p t
p t
W
S
S
S
S
u
u
10
10
10
D
H
X 2
u
u
p t
p t
t u
t u
t u
t u
g i
g i
g i
g i
d i
p t
p t
e
o
n
n
n
n
9
9
9
t u
t u
a l
d l
h t
X 2
X 2
X 2
t u
t u
D
H
H
H
l a
l a
l a
l a
y
e
o
o
o
D
H
i T
– 20
– 15
D
H
i T
a l
d l
d l
d l
O
O
O
O
e
o
m
e
o
u
u
u
u
y
a l
d l
m
f o
i T
i T
i T
a l
d l
e
– 20
– 10
– 10
p t
p t
p t
p t
i T
y
e
i T
y
m
m
m
(
5
t u
t u
t u
t u
i T
W
P
i T
m
(
6
m
i T
e
e
e
[ns]
W
[ns] (if external bus cycle is a + b , n=(b x 2)-1)
a
m
m
e
D
H
H
H
R
m
e
a r
B (
(
(
e
R
R
W
e
o
o
o
e
[ns]
[ns]
[ns]
e
s
m
C
a l
d l
d l
d l
D
s
a t
R
t e
L
a t
y
(if external bus cycle is a + b , m=b)
i T
i T
i T
n
s
K
s
r e
i T
n
d
a t
a t
m
m
m
d
r a
s
n
m
n
r a
a t
e
e
e
d
) d
d
e
r a
) d
n
B (
(
(
r a
R
W
d
) d
C
) d
D
r a
R
L
) d
s
K
s
a t
a t
s
n
n
a t
d
d
r a
n
r a
d
) d
) d
r a
) d
o
C unless otherwise specified)
See Figure 5.1
M
e
C
a
o
s
n
u
d
e r
t i
o i
m
n
e
t n
5. Electrical Characteristics
(
(
(
(
(
N
N
N
N
N
M
o
o
o
o
o
3 -
0
0
0
0
0
e t
e t
e t
e t
e t
V
i
. n
S
CC1
a t
) 1
) 1
) 2
) 1
) 2
n
d
a
=V
d r
M
1
1
1
1
a
8
8
8
8
CC2
. x
=3.3V
U
n
n
n
n
n
n
n
n
n
n
n
n
n
n
n
n
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
t i