HD64F2636F20J Renesas Electronics America, HD64F2636F20J Datasheet - Page 946
![IC H8S MCU FLASH 128K 128QFP](/photos/28/61/286109/128-bfqfp_sml.jpg)
HD64F2636F20J
Manufacturer Part Number
HD64F2636F20J
Description
IC H8S MCU FLASH 128K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Specifications of HD64F2636F20J
Core Processor
H8S/2600
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI, SmartCard
Peripherals
Motor Control PWM, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 12x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
128-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Section 21C ROM
(H8S/2635 Group)
21C.14.1 Notes on Power-Down States
1. When the flash memory is in a power-down state, part or all of the internal power supply
2. In a power-down state, FLMCR1, FLMCR2, EBR1, EBR2, RAMER, and FLPWCR cannot be
21C.15 Flash Memory Programming and Erasing Precautions
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
the Renesas microcomputer device type * with 256-kbyte on-chip flash memory.
Only use the specified socket adapter. Failure to observe these points may result in damage to the
device.
Note: * The H8S/2635 is Renesas Electronics microcomputer devices with 256 kbytes of on-chip
Powering on and off (see figures 21C-18 to 21C-20): Do not apply a high level to the FWE pin
until V
When applying or disconnecting V
the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
Page 896 of 1458
circuitry is halted. Therefore, a power supply circuit stabilization period must be provided
when returning to normal operation. When the flash memory returns to its normal operating
state from a power-down state, bits STS2 to STS0 in SBYCR must be set to provide a wait
time of at least 20 µs (power supply stabilization time), even if an oscillation stabilization
period is not necessary.
read from or written to.
CC
flash memory. (The H8S/2635 has 192 kbytes of PROM. The area from H'30000 to
H'3FFFF should be programmed as H'FF.)
has stabilized. Also, drive the FWE pin low before turning off V
CC
power, fix the FWE pin low and place the flash memory in
H8S/2639, H8S/2638, H8S/2636,
CC
REJ09B0103-0800 Rev. 8.00
.
H8S/2630, H8S/2635 Group
May 28, 2010
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