COP8CFE9IMT9/NOPB National Semiconductor, COP8CFE9IMT9/NOPB Datasheet - Page 10

• Manufacturer Part Number: COP8CFE9IMT9/NOPB
• Description: IC MCU EEPROM 8BIT 8K 48-TSSOP
• Manufacturer: National Semiconductor
• Series: COP8™ 8Cr

Specifications of COP8CFE9IMT9/NOPB

• Core Processor: COP8
• Core Size: 8-Bit
• Connectivity: Microwire/Plus (SPI)
• Peripherals: POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Eeprom Size: -
• Other names: *COP8CFE9IMT9; *COP8CFE9IMT9/NOPB; COP8CFE9IMT9

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Operating Voltage
Power Supply Rise Time
Power Supply Ripple (Note 2)
Supply Current (Note 3)
HALT Current with BOR Disabled (Note 4)
Idle Current (Note 3)
Supply Current When Programming In ISP
Input Levels (V
Internal Bias Resistor for the CKI Crystal/Resonator
Oscillator
Hi-Z Input Leakage
Input Pullup Current
Port Input Hysteresis
Output Current Levels
B0-B3 Outputs
All Others
TRI-STATE Leakage
Maximum Input Current without Latchup (Note 5)
RAM Retention Voltage, V
Input Capacitance
Voltage on G6 to Force Execution from Boot
ROM(Note 8)
G6 Rise Time to Force Execution from Boot ROM
Input Current on G6 when Input
Instruction Cycle Time (t
Output Propagation Delay
Frequency of MICROWIRE/PLUS in Slave
Mode
MICROWIRE/PLUS Setup Time (t
MICROWIRE/PLUS Hold Time (t
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
CKI = 10 MHz
CKI = 3.33 MHz
CKI = 10 MHz
Logic High
Logic Low
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
Allowable Sink and Source Current per Pin
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
Allowable Sink and Source Current per Pin
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Crystal/Resonator
IH
, V
Parameter
IL
Parameter
)
C
R
)
(in HALT Mode)
>
UWH
UWS
V
CC
)
DC Electrical Characteristics (−40˚C
AC Electrical Characteristics (−40˚C
)
4.5V
R
L
=2.2k, C
Peak-to-Peak
V
V
V
V
V
V
V
V
V
V
V
V
V
V
G6 rise time must be slower
than 100 ns
V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
IN
V
= 11V, V
Conditions
= 5.5V, t
= 4.5V, t
= 5.5V, CKI = 0 MHz
= 5.5V, t
= 5.0V, t
= 5.5V
= 5.5V, V
= 4.5V, V
= 4.5V, V
= 4.5V, V
= 4.5V, V
= 4.5V, V
= 4.5V, V
= 5.5V
CC
L
Conditions
10
= 100 pF
5.5V
CC
C
C
C
C
IN
OH
OH
OL
OH
OH
OL
= 0.5 µs
= 1.5 µs
= 0.5 µs
= 0.5 µs
= 5.5V
= 0V
= 0.3V
= 1.0V
= 3.8V
= 4.2V
= 3.8V
= 3.8V
T
T
A
A
+125˚C)
+125˚C)
Min
0.5
20
20
0.25 V
0.8 V
2 x V
−6.3
Min
−40
100
4.5
0.3
2.0
10
−3
−9
−9
−9
−3
9
9
CC
CC
CC
Typ
Typ
500
1.0
<
26
4
Max
DC
2
0.16 V
50 x 10
0.1 V
V
−250
±
CC
Max
12.4
5.5
5.5
1.9
2.5
40
+3
15
12
+3
200
7
+ 7
CC
CC
6
Units
MHz
µs
ns
ns
Units
mA
mA
mA
mA
M
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
nS
µA
pF
ns
V
V
V
V
V
V
V