MC68HC908AB32CFU Freescale Semiconductor, MC68HC908AB32CFU Datasheet - Page 64

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MC68HC908AB32CFU

Manufacturer Part Number
MC68HC908AB32CFU
Description
IC MCU 8MHZ 32K FLASH 64-QFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC68HC908AB32CFU

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI, SPI
Peripherals
POR, PWM
Number Of I /o
51
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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FLASH Memory
4.8 FLASH Block Protection
Technical Data
64
NOTE:
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
FLASH Memory
Due to the ability of the on-board charge pump to erase and program the
FLASH memory in the target application, provision is made for protecting
a block of memory from unintentional erase or program operations due
to system malfunction. This protection is done by using of a FLASH
Block Protect Register (FLBPR). The FLBPR determines the range of
the FLASH memory which is to be protected. The range of the protected
area starts from a location defined by FLBPR and ends at the bottom of
the FLASH memory ($FFFF). When the memory is protected, the HVEN
bit cannot be set in either ERASE or PROGRAM operations.
In performing a program or erase operation, the FLASH block protect
register must be read after setting the PGM or ERASE bit and before
asserting the HVEN bit
When the FLBPR is program with all 0’s, the entire memory is protected
from being programmed and erased. When all the bits are erased (all
1’s), the entire memory is accessible for program and erase.
When bits within the FLBPR are programmed, they lock a block of
memory, address ranges as shown in
Register. Once the FLBPR is programmed with a value other than $FF,
any erase or program of the FLBPR or the protected block of FLASH
memory is prohibited. The FLBPR itself can be erased or programmed
only with an external voltage, V
also allows entry from reset into the monitor mode.
FLASH Memory
Characteristics.
TST
, present on the IRQ pin. This voltage
4.8.1 FLASH Block Protect
PROG
MC68HC908AB32
maximum.
Freescale Semiconductor
See 23.13
Rev. 1.1

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