MCF5212CAE66 Freescale Semiconductor, MCF5212CAE66 Datasheet - Page 30
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MCF5212CAE66
Manufacturer Part Number
MCF5212CAE66
Description
IC MCU 256K FLASH 66MHZ 64-LQFP
Manufacturer
Freescale Semiconductor
Series
MCF521xr
Datasheet
1.MCF5213CAF80.pdf
(54 pages)
Specifications of MCF5212CAE66
Core Processor
Coldfire V2
Core Size
32-Bit
Speed
66MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
55
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Processor Series
MCF521x
Core
ColdFire V2
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
I2C, QSPI, UART
Maximum Clock Frequency
80 MHz
Number Of Programmable I/os
56
Number Of Timers
10
Operating Supply Voltage
3 V to 3.6 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
JLINK-CF-BDM26, EWCF
Development Tools By Supplier
M52210DEMO, M52211EVB
Minimum Operating Temperature
0 C
On-chip Adc
12 bit, 8 Channel
For Use With
M5211DEMO - KIT DEMO FOR MCF5211
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCF5212CAE66
Manufacturer:
FREESCAL
Quantity:
1 210
Company:
Part Number:
MCF5212CAE66
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MCF5212CAE66
Manufacturer:
FREESCALE
Quantity:
20 000
Electrical Characteristics
2.4
The flash memory characteristics are shown in
30
1
2
System clock (read only)
System clock (program/erase)
The average chip-junction temperature (T
Where:
For most applications P
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring P
for a known T
any value of T
Refer to the flash memory section for more information
Depending on packaging; see the orderable part number summary.
1
2
Maximum number of guaranteed program/erase cycles
Data retention at average operating temperature of 85°C
A program/erase cycle is defined as switching the bits from 1 → 0 → 1.
Reprogramming of a flash memory array block prior to erase is not required.
Flash Memory Characteristics
T
Θ
P
P
P
A
D
INT
I/O
JA
A
A
. Using this value of K, the values of P
.
Parameter
= ambient temperature, °C
= package thermal resistance, junction-to-ambient, °C/W
= P
= chip internal power, I
= power dissipation on input and output pins — user determined, watts
I/O
INT
< P
Table 24. SGFM Flash Program and Erase Characteristics
+ P
INT
K = P
2
Table 25. SGFM Flash Module Life Characteristics
I/O
and can be ignored. An approximate relationship between P
Parameter
D
× (T
MCF5213 ColdFire Microcontroller, Rev. 4
J
A
) in °C can be obtained from:
+ 273 °C) + Θ
P
DD
T
Table 24
D
J
× V
=
=
K
T
DD
(V
(V
A
D
÷
DD
DD
+
, watts
and T
Symbol
(
f
and
sys(P/E)
f
T
(
sys(R)
P
J
JMA
= 3.0 to 3.6 V)
= 3.0 to 3.6 V)
1
+
D
Table
before failure
J
273°C
×
can be obtained by solving equations (1) and (2) iteratively for
× P
Θ
JMA
D
25.
)
2
)
(1)
(2)
(3)
0.15
Min
0
Retention
Symbol
P/E
Typ
—
—
D
and T
66.67 or 80
66.67 or 80
10,000
J
Freescale Semiconductor
Value
(if P
10
Max
I/O
2
D
is neglected) is:
(at equilibrium)
1
1
Cycles
Years
Unit
MHz
MHz
Unit