MC9S12C64CFUE Freescale Semiconductor, MC9S12C64CFUE Datasheet - Page 660

IC MCU 64K FLASH 4K RAM 80-QFP

MC9S12C64CFUE

Manufacturer Part Number
MC9S12C64CFUE
Description
IC MCU 64K FLASH 4K RAM 80-QFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheets

Specifications of MC9S12C64CFUE

Core Processor
HCS12
Core Size
16-Bit
Speed
25MHz
Connectivity
CAN, EBI/EMI, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
60
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.35 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-QFP
Processor Series
S12C
Core
HCS12
Data Bus Width
16 bit
Data Ram Size
4 KB
Interface Type
CAN/SCI/SPI
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
60
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
M68EVB912C32EE
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
Package
80PQFP
Family Name
HCS12
Maximum Speed
25 MHz
Operating Supply Voltage
2.5|5 V
Height
2.4 mm
Length
14 mm
Supply Voltage (max)
2.75 V, 5.5 V
Supply Voltage (min)
2.35 V, 2.97 V
Width
14 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC9S12C64CFUE
Manufacturer:
FREESCALE
Quantity:
3 450
Part Number:
MC9S12C64CFUE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MC9S12C64CFUE
Manufacturer:
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Quantity:
3 450
Appendix A Electrical Characteristics
A.2.3.3
There are two cases to consider.
A.2.4
Table A-12
capacitance and source resistance
1. These values include quantization error which is inherently 1/2 count for any A/D converter.
660
Conditions are shown in
Conditions are shown in
V
f
ATDCLK
Num
Num
.
REF
1
2
3
4
5
1
2
3
4
5
6
7
8
1. A current is injected into the channel being converted. The channel being stressed has conversion
2. Current is injected into pins in the neighborhood of the channel being converted. A portion of this
= V
values of $3FF ($FF in 8-bit mode) for analog inputs greater than V
than V
current is picked up by the channel (coupling ratio K), This additional current impacts the accuracy
of the conversion depending on the source resistance.
The additional input voltage error on the converted channel can be calculated as V
I
channel.
= 2.0MHz
INJ
RH
C
C
T
C
C
C
C
P
P
P
P
P
P
P
P
– V
, with I
specifies the ATD conversion performance excluding any errors due to current injection, input
ATD Accuracy (5V Range)
Current Injection
RL
RL
Max input Source Resistance
Total Input Capacitance
Disruptive Analog Input Current
Coupling Ratio positive current injection
Coupling Ratio negative current injection
10-Bit Resolution
10-Bit Differential Nonlinearity
10-Bit Integral Nonlinearity
10-Bit Absolute Error
8-Bit Resolution
8-Bit Differential Nonlinearity
8-Bit Integral Nonlinearity
8-Bit Absolute Error
= 5.12V. Resulting to one 8 bit count = 20mV and one 10 bit count = 5mV
unless the current is higher than specified as disruptive conditions.
INJ
Table A-4
Table A-4
being the sum of the currents injected into the two pins adjacent to the converted
unless otherwise noted
unless otherwise noted
Rating
Table 21-18. ATD Electrical Characteristics
Table A-12. ATD Conversion Performance
1
Rating
(1)
MC9S12C-Family / MC9S12GC-Family
Non Sampling
Sampling
Rev 01.24
Symbol
DNL
DNL
LSB
LSB
INL
INL
AE
AE
Symbol
C
C
I
R
K
K
NA
INN
INS
S
p
n
–0.5
–1.0
Min
-2.5
-1.5
–1
–2
–2.5
Min
RH
±0.5
and $000 for values less
Typ
20
±1
5
Typ
Freescale Semiconductor
ERR
Max
Max
2.5
0.5
1.0
1.5
10
10
2.5
10
15
1
2
1
-4
-2
= K * R
Counts
Counts
Counts
Counts
Counts
Counts
Unit
Unit
mV
mV
mA
A/A
A/A
KΩ
pF
S
*

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