R5F363AENFA#U0 Renesas Electronics America, R5F363AENFA#U0 Datasheet - Page 58

• Manufacturer Part Number: R5F363AENFA#U0
• Description: MCU 4KB FLASH 256/16K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: M16C/60/63r

Specifications of R5F363AENFA#U0

• Core Processor: M16C/60
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: EBI/EMI, I²C, SIO, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 85
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 20K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 26x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

M16C/63 Group
REJ03B0271-0100 Rev.1.00 Sep 15, 2009
Page 56 of 113
Table 5.11
Notes:
-
-
-
-
t
-
-
-
-
-
-
t
-
d(SR-SUS)
PS
Symbol
V
1.
2.
3.
4.
5.
6.
7.
CC1
Definition of program and erase cycles
The program and erase cycles refer to the number of per-block erasures.
If the program and erase cycles are n (n = 10,000), each block can be erased n times.
For example, if a 4 Kbyte block is erased after writing two word data 1,024 times, each to a different address, this
counts as one program and erase cycles. Data cannot be written to the same address more than once without
erasing the block (rewrite prohibited).
Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresses in turn so that as much of the block as possible is used up before performing an erase
operation. For example, when programming groups of 16 bytes, the effective number of rewrites can be
minimized by programming up to 256 groups before erasing them all in one operation. In addition, averaging the
erasure cycles between blocks A and B can further reduce the actual erasure cycles. It is also advisable to retain
data on the erasure cycles of each block and limit the number of erase operations to a certain number.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least three times until the erase error does not occur.
Customers desiring program/erase failure rate information should contact their Renesas technical support
representative.
The data hold time includes time that the power supply is off or the clock is not supplied.
After an erase start or erase restart, if an interval of at least 20 ms is not set before the next suspend request, the
erase sequence cannot be completed.
= 2.7 to 5.5 V at T
Program and erase cycles
Two words program time
Lock bit program time
Block erase time
Time delay from suspend request
until suspend
Interval from erase start/restart until
following suspend request
Suspend interval necessary for
auto-erasure to complete
Time from suspend until erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Flash Memory Circuit Stabilization Wait Time
Data hold time
Flash Memory (Data Flash) Electrical Characteristics
Parameter
(6)
opr
= -20 to 85
(7)
(1), (3), (4)
°
C/-40 to 85
V
V
V
V
Ambient temperature = 55 °C
CC1
CC1
CC1
CC1
= 3.3 V, T
= 3.3 V, T
= 3.3 V, T
= 3.3 V, T
°
C, unless otherwise specified.
Conditions
opr
opr
opr
opr
= 25°C
= 25°C
= 25°C
= 25°C
10,000
−20/−40
Min.
2.7
2.7
20
20
0
(2)
5. Electrical Characteristics
Typ.
Standard
300
140
0.2
clock × 1 cycle
5 + CPU clock
× 3 cycles
30 + CPU
Max.
4000
3000
3.0
5.5
5.5
85
50
times
year
Unit
ms
ms
μs
μs
μs
μs
μs
°C
V
V
s