MC908AP32ACFBE Freescale Semiconductor, MC908AP32ACFBE Datasheet - Page 44
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MC908AP32ACFBE
Manufacturer Part Number
MC908AP32ACFBE
Description
IC MCU 32K FLASH 8MHZ 44-QFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908AP16ACFBER.pdf
(316 pages)
Specifications of MC908AP32ACFBE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, IRSCI, SCI, SPI
Peripherals
LED, LVD, POR, PWM
Number Of I /o
32
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFP
Controller Family/series
HC08
No. Of I/o's
32
Ram Memory Size
2KB
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
I2C, SCI, SPI
Rohs Compliant
Yes
Processor Series
HC08AP
Core
HC08
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
32
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908AP64E, M68CBL05CE
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
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Memory
2.5.4 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
2.5.5 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80 or $XXC0. Use the following procedure to program a row
of FLASH memory.
44
10. Wait for time, t
11. Clear the HVEN bit.
8. Clear the HVEN bit.
9. After time, t
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Write any data to any FLASH location within the FLASH memory address range.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Write any data to any FLASH location within the address range of the row to be programmed.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the FLASH location to be programmed.
7. Wait for time, t
8. Repeat steps 6 and 7 until all bytes within the row are programmed.
9. Clear the PGM bit.
address and data for programming.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Due to the relatively long mass erase time, user should take care in the
code to prevent a COP reset from happening while the HVEN bit is set.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
rcv
rcv
(Figure 2-4
(1 µs), the memory can be accessed in read mode again.
(1 µs), the memory can be accessed in read mode again.
prog
nvh
me
nvs
nvh1
nvs
pgs
(5 µs).
(200 ms). (See NOTE below.)
(20 µs to 40 µs).
(5 µs).
(5 µs).
(10 µs).
(100 µs).
shows a flowchart of the programming algorithm.)
MC68HC908AP A-Family Data Sheet, Rev. 3
NOTE
NOTE
Freescale Semiconductor
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