MC9S08GT60ACFBE Freescale Semiconductor, MC9S08GT60ACFBE Datasheet - Page 281

IC MCU 60K FLASH 4K RAM 44-QFP

MC9S08GT60ACFBE

Manufacturer Part Number
MC9S08GT60ACFBE
Description
IC MCU 60K FLASH 4K RAM 44-QFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08GT60ACFBE

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
36
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFP
Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
40MHz
Interface Type
I2C/SCI/SPI
Total Internal Ram Size
4KB
# I/os (max)
36
Number Of Timers - General Purpose
4
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
1.8/2.08V
On-chip Adc
8-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Package Type
PQFP
Processor Series
S08GT
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
4 KB
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
39
Number Of Timers
2
Operating Supply Voltage
0 V to 1.8 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
M68EVB908GB60E, M68DEMO908GB60E
Minimum Operating Temperature
- 40 C
For Use With
M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Compliant

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A.10
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
Freescale Semiconductor
1
2
3
4
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D,
Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
0 < f
0 < f
T
T = 25°C
L
Flash Specifications
to T
Bus
Bus
H
< 8 MHz
< 20 MHz
= –40°C to + 85°C
Characteristic
4
2
(2)
1
3
(2)
Table A-13. Flash Characteristics
(2)
MC9S08GB60A Data Sheet, Rev. 2
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
prog
Read
10,000
2.08
Min
150
1.8
1.8
15
5
Chapter 4,
100,000
Typical
20,000
4000
100
9
4
Appendix A Electrical Characteristics
“Memory.”
Max
6.67
200
3.6
3.6
3.6
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
DD
supply.
281

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