PIC16LF877-04I/P Microchip Technology, PIC16LF877-04I/P Datasheet - Page 151
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PIC16LF877-04I/P
Manufacturer Part Number
PIC16LF877-04I/P
Description
IC MCU FLASH 8KX14 EE A/D 40DIP
Manufacturer
Microchip Technology
Series
PIC® 16Fr
Datasheet
1.PIC16F873-04SO.pdf
(218 pages)
Specifications of PIC16LF877-04I/P
Core Processor
PIC
Core Size
8-Bit
Speed
4MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
33
Program Memory Size
14KB (8K x 14)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
368 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
40-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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15.0
Absolute Maximum Ratings †
Ambient temperature under bias................................................................................................................ .-55 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Voltage on MCLR with respect to V
Voltage on RA4 with respect to Vss .................................................................................................................0 to +8.5 V
Total power dissipation (Note 1) ..............................................................................................................................1.0 W
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB, and PORTE (combined) (Note 3) ...................................................200 mA
Maximum current sourced by PORTA, PORTB, and PORTE (combined) (Note 3)..............................................200 mA
Maximum current sunk by PORTC and PORTD (combined) (Note 3) .................................................................200 mA
Maximum current sourced by PORTC and PORTD (combined) (Note 3) ............................................................200 mA
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: Pdis = V
2001 Microchip Technology Inc.
2: Voltage spikes below V
3: PORTD and PORTE are not implemented on PIC16F873/876 devices.
ELECTRICAL CHARACTERISTICS
Thus, a series resistor of 50-100 should be used when applying a “low” level to the MCLR pin, rather than
pulling this pin directly to V
DD
with respect to V
IK
OK
(V
DD
SS
I
(V
< 0 or V
pin ..............................................................................................................................250 mA
O
pin ...........................................................................................................................300 mA
< 0 or V
SS
I
SS
SS
SS
> V
........................................................................................................... -0.3 to +7.5 V
(Note 2) ................................................................................................0 to +14 V
O
SS
(except V
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
DD
> V
.
)
DD
)
DD
, MCLR. and RA4) ....................................... -0.3 V to (V
DD
x {I
DD
-
I
OH
} +
{(V
DD
PIC16F87X
- V
OH
) x I
DS30292C-page 149
OH
} + (V
DD
O
+ 0.3 V)
20 mA
20 mA
l x I
OL
)