PIC18LF1330-I/SO Microchip Technology, PIC18LF1330-I/SO Datasheet - Page 8
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PIC18LF1330-I/SO
Manufacturer Part Number
PIC18LF1330-I/SO
Description
IC PIC MCU FLASH 4KX16 18SOIC
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.AC162078.pdf
(318 pages)
3.PIC18F1230-ISO.pdf
(6 pages)
4.PIC18F1230-ISO.pdf
(12 pages)
5.PIC18F1230-ISO.pdf
(4 pages)
6.PIC18F1230-IP.pdf
(312 pages)
Specifications of PIC18LF1330-I/SO
Core Size
8-Bit
Program Memory Size
8KB (4K x 16)
Oscillator Type
Internal
Core Processor
PIC
Speed
40MHz
Connectivity
UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
16
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 4x10b
Operating Temperature
-40°C ~ 85°C
Package / Case
18-SOIC (7.5mm Width)
Controller Family/series
PIC18
No. Of I/o's
16
Eeprom Memory Size
128Byte
Ram Memory Size
256Byte
Cpu Speed
40MHz
No.
RoHS Compliant
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
EUSART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
16
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18LF1330-I/SO
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
PIC18F1230/1330
8. Module: Electrical Characteristics
In Table 22-1, the values for the D122 and D133A
parameters are changed as indicated by bold text.
TABLE 22-1:
DS80352B-page 8
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D125
D130
D131
D132B V
D133A T
D134
D135
Note 1:
Param
No.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
T
T
I
E
V
T
I
DDP
DDP
Sym
RETD
REF
IW
RETD
DEW
D
DRW
P
PR
PEW
only and are not tested.
Refer to Section 7.8 for a more detailed discussion on data EEPROM endurance.
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
for Read/Write
for Read
for Self-Timed Write
Characteristic
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
3.59
1.79
Min
10K
1M
40
40
—
—
MIN
MIN
MIN
Typ†
100K
4.10
10M
2.05
100
1M
10
10
—
—
—
—
Max
4.86
2.43
5.5
5.5
5.5
—
—
—
—
—
—
—
-40°C ≤ T
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
mA
ms
ms
V
V
V
A
© 2008 Microchip Technology Inc.
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
V
voltage
specifications are violated
≤ +85°C for industrial
MIN
MIN
MIN
= Minimum operating
= Minimum operating
= Minimum operating
Conditions