PIC18F2221-I/ML Microchip Technology, PIC18F2221-I/ML Datasheet - Page 349

• Manufacturer Part Number: PIC18F2221-I/ML
• Description: IC PIC MCU FLASH 2KX16 28QFN
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F2221-I/ML

• Core Size: 8-Bit
• Program Memory Size: 4KB (2K x 16)
• Core Processor: PIC
• Speed: 40MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
• Number Of I /o: 25
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Controller Family/series: PIC18
• No. Of I/o's: 25
• Eeprom Memory Size: 256Byte
• Ram Memory Size: 512Byte
• Cpu Speed: 40MHz
• No. Of Timers: 4
• Package: 28QFN EP
• Device Core: PIC
• Family Name: PIC18
• Maximum Speed: 40 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 25
• Interface Type: I2C/SPI/USART
• On-chip Adc: 10-chx10-bit
• Number Of Timers: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT28QFN4 - SOCKET TRANS ICE 28QFN W/CABLEAC164322 - MODULE SOCKET MPLAB PM3 28/44QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TABLE 27-1:
© 2009 Microchip Technology Inc.
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D125
D130
D131
D132
D132B V
D133A T
D134
D135
Note 1:
Param
No.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
T
T
I
E
V
V
T
I
DDP
DDP
Sym
RETD
REF
IW
RETD
D
DRW
DEW
P
PR
IE
PEW
only and are not tested.
Refer to Section 8.7 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Self-Timed Write
PIC18F2221/2321/4221/4321 FAMILY
Characteristic
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
10K
Min
1M
3.0
40
40
—
—
—
—
MIN
MIN
MIN
100K
Typ†
10M
100
1M
10
10
—
—
—
—
—
4
2
Max
5.5
5.5
5.5
5.5
—
—
—
—
—
—
—
—
—
-40°C ≤ T
-40°C ≤ T
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
mA
ms
ms
V
V
V
V
A
A
Using EECON to read/write,
V
voltage
specifications are violated
V
voltage
Using ICSP™ port, 25°C
V
voltage
specifications are violated
≤ +85°C for industrial
≤ +125°C for extended
MIN
MIN
MIN
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS39689F-page 349