DF2378BVFQ35V Renesas Electronics America, DF2378BVFQ35V Datasheet - Page 298

• Manufacturer Part Number: DF2378BVFQ35V
• Description: IC H8S/2378 MCU FLASH 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378BVFQ35V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 35MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
Rev.7.00 Mar. 18, 2009 page 230 of 1136
REJ09B0109-0700
(Address shift size set to 8 bits)
DCTL
Figure 6.51 Example of DQMU and DQML Byte Control
This LSI
Notes: 1. Bank control is not available.
CS5 (SDRAMφ)
UCAS (DQMU)
LCAS (DQML)
2. The CKE and CS pins must be fixed to 1 when the power supply is input.
3. The CS pin must be fixed to 0 before accessing synchronous DRAM.
D15 to D0
CS2 (RAS)
CS3 (CAS)
I/O PORT
CS4 (WE)
OE (CKE)
A23
A21
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
64-Mbit synchronous DRAM
1 Mword × 16 bits × 4-bank configuration
8-bit column address
DQMU
RAS
CAS
WE
A13 (BS1)
A12 (BS0)
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DQ15 to DQ0
CKE
CS
CLK
DQML
address: A13/A12
input: A11 to A0
Column address
input: A7 to A0
Row address
Bank select