C8051F339-GM Silicon Laboratories Inc, C8051F339-GM Datasheet - Page 33

• Manufacturer Part Number: C8051F339-GM
• Description: IC MCU 16K FLASH 24QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F33xr

Specifications of C8051F339-GM

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 21
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 24-QFN
• Processor Series: C8051F3x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 768 B
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 21
• Number Of Timers: 4
• Operating Supply Voltage: 2.7 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F336DK
• Minimum Operating Temperature: - 40 C
• Package: 24QFN EP
• Device Core: 8051
• Family Name: C8051F33x
• Maximum Speed: 25 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Details
• Other names: 336-1426-5

Table 6.9. Temperature Sensor Electrical Characteristics
V
Table 6.10. Voltage Reference Electrical Characteristics
V
Parameter
Linearity
Slope
Slope Error*
Offset
Offset Error*
Note: Represents one standard deviation from the mean.
Parameter
Internal Reference (REFBE = 1)
Output Voltage
VREF Short-Circuit Current
VREF Temperature
Coefficient
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
Power Supply Rejection
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Power Specifications
Reference Bias Generator
DD
DD
= 3.0 V,
= 3.0 V; –40 to +85 °C unless otherwise specified.
–
40 to +85 °C unless otherwise specified.
Conditions
25 °C ambient
Load = 0 to 200 µA to AGND
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
Sample Rate = 200 ksps; VREF = 3.0 V
REFBE = ‘1’ or TEMPE = ‘1’
Conditions
Temp = 0 °C
Temp = 0 °C
Rev.1.0
Min
—
—
—
—
—
C8051F336/7/8/9
2.35
Min
—
—
—
—
—
—
—
—
0
± 0.2
2.25
11.6
Typ
785
23
2.42
–0.6
Typ
200
7.5
—
30
30
—
3
3
Max
—
—
—
—
—
Max
2.50
V
10
50
—
—
—
—
—
—
DD
mV/°C
µV/°C
ppm/°C
Units
µV/µA
Units
mV/V
mV
mV
°C
mA
ms
µA
µA
µs
V
V
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