MC56F8367VPYE Freescale Semiconductor, MC56F8367VPYE Datasheet - Page 165

• Manufacturer Part Number: MC56F8367VPYE
• Description: IC DSP 16BIT 60MHZ 160-LQFP
• Manufacturer: Freescale Semiconductor
• Series: 56F8xxxr

Specifications of MC56F8367VPYE

• Core Processor: 56800
• Core Size: 16-Bit
• Speed: 60MHz
• Connectivity: CAN, EBI/EMI, SCI, SPI
• Peripherals: POR, PWM, Temp Sensor, WDT
• Number Of I /o: 76
• Program Memory Size: 544KB (272K x 16)
• Program Memory Type: FLASH
• Ram Size: 18K x 16
• Voltage - Supply (vcc/vdd): 2.25 V ~ 3.6 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 160-LQFP
• Cpu Family: 56F8xxx
• Device Core Size: 16b
• Frequency (max): 60MHz
• Interface Type: CAN/SCI/SPI
• Total Internal Ram Size: 36KB
• # I/os (max): 76
• Number Of Timers - General Purpose: 4
• Operating Supply Voltage (typ): 3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• On-chip Adc: 4(4-chx12-bit)
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 105C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 160
• Package Type: LQFP
• Data Bus Width: 16 bit
• Processor Series: MC56F83xx
• Core: 56800E
• Numeric And Arithmetic Format: Fixed-Point
• Device Million Instructions Per Second: 60 MIPs
• Maximum Clock Frequency: 60 MHz
• Number Of Programmable I/os: 76
• Data Ram Size: 36 KB
• Operating Supply Voltage: 3.3 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: MC56F8367EVME
• Minimum Operating Temperature: - 40 C
• Package: 160LQFP
• Family Name: 56F8xxx
• Maximum Speed: 60 MHz
• Number Of Timers: 4
• For Use With: MC56F8367EVME - EVAL BOARD FOR MC56F83X
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

C, the internal [dynamic component], is classic C*V
56800E core and standard cell logic.
D, the external [dynamic component], reflects power dissipated on-chip as a result of capacitive loading
on the external pins of the chip. This is also commonly described as C*V
of the IO cell types used on the device reveal that the power-versus-load curve does have a non-zero
Y-intercept.
Power due to capacitive loading on output pins is (first order) a function of the capacitive load and
frequency at which the outputs change.
in the IO cells as a function of capacitive load. In these cases:
TotalPower = Σ((Intercept +Slope*Cload)*frequency/10MHz)
where:
Because of the low duty cycle on most device pins, power dissipation due to capacitive loads was found
to be fairly low when averaged over a period of time. The one possible exception to this is if the chip is
using the external address and data buses at a rate approaching the maximum system rate. In this case,
power from these buses can be significant.
E, the external [static component], reflects the effects of placing resistive loads on the outputs of the
device. Sum the total of all V
0.5 for the purposes of these rough calculations. For instance, if there is a total of 8 PWM outputs driving
10mA into LEDs, then P = 8*.5*.01 = 40mW.
In previous discussions, power consumption due to parasitics associated with pure input pins is ignored,
as it is assumed to be negligible.
Freescale Semiconductor
Preliminary
•
•
•
Summation is performed over all output pins with capacitive loads
TotalPower is expressed in mW
Cload is expressed in pF
Table 10-25 I/O Loading Coefficients at 10MHz
PDU08DGZ_ME
PDU04DGZ_ME
2
/R or IV to arrive at the resistive load contribution to power. Assume V =
56F8367 Technical Data, Rev. 8
Table 10-20
provides coefficients for calculating power dissipated
2
Intercept
1.15mW
*F CMOS power dissipation corresponding to the
1.3
0.11mW / pF
0.11mW / pF
Slope
2
*F, although simulations on two
Power Consumption
165