MC908JL16CFJE Freescale Semiconductor, MC908JL16CFJE Datasheet - Page 35
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MC908JL16CFJE
Manufacturer Part Number
MC908JL16CFJE
Description
IC MCU 16K FLASH 8MHZ 32-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908JL16CFJER.pdf
(230 pages)
Specifications of MC908JL16CFJE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, SCI
Peripherals
LED, LVD, POR, PWM
Number Of I /o
26
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 13x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-LQFP
Processor Series
HC08JL
Core
HC08
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SCI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
26
Number Of Timers
4
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908JL16E, M68CBL05CE
Minimum Operating Temperature
- 40 C
On-chip Adc
13-ch x 10-bit
Controller Family/series
HC08
No. Of I/o's
26
Ram Memory Size
512Byte
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
I2C, SCI, SPI
Rohs Compliant
Yes
For Use With
DEMO908JL16E - BOARD DEMO FOR MC908JL16
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
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2.5.3 FLASH Page Erase Operation
Use the following procedure to erase a page of FLASH memory. A page consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80 or $XXC0. The 36-byte user interrupt vectors area also
forms a page. Any page within the 16,384 bytes user memory area can be erased alone.
2.5.4 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
Freescale Semiconductor
10. After time, t
10. After time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the page address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the FLASH memory address range.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
RCV
RCV
Erase
Erase
(1 µs)
(1 µs)
NVS
NVH
NVS
NVH1
(10 µs).
(10 µs).
(5 µs).
(4 ms).
(4 ms).
,
,
(100 µs).
the memory can be accessed in read mode again.
the memory can be accessed in read mode again.
MC68HC908JL16 Data Sheet, Rev. 1.1
NOTE
NOTE
FLASH Memory
35