STM32F103VBH6 STMicroelectronics, STM32F103VBH6 Datasheet - Page 26

MCU ARM 128KB FLASH MEM 100-LFBG

STM32F103VBH6

Manufacturer Part Number
STM32F103VBH6
Description
MCU ARM 128KB FLASH MEM 100-LFBG
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet

Specifications of STM32F103VBH6

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
80
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LFBGA
Processor Series
STM32F103x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
20 KB
Interface Type
CAN, I2C, SPI, USART, USB
Maximum Clock Frequency
72 MHz
Number Of Programmable I/os
100
Number Of Timers
3 x 16 bit
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
ST-LINK
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit x 2, 16 Channel
For Use With
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Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
Other names
497-6069

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Electrical characteristics
5.2
26/67
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in
Table 5: Current
damage to the device. These are stress ratings only and functional operation of the device
at these conditions is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Table 4.
1. All 3.3 V power (V
2. I
Table 5.
1. All 3.3 V power (V
2. I
3. Negative injection disturbs the analog performance of the device. See note in
4. When several inputs are submitted to a current injection, the maximum ΣI
|V
V
I
V
INJ(PIN)
ΣI
supply.
maximum is respected. If V
externally to the I
induced by V
supply.
cannot be respected, the injection current must be limited externally to the I
injection is induced by V
characteristics.
positive and negative injected currents (instantaneous values). These results are based on
characterization with ΣI
Symbol
SSX
|∆V
ESD(HBM)
INJ(PIN)
INJ(PIN)
DD
Symbol
INJ(PIN)
V
I
I
–V
VDD
DDx
VSS
I
IN
− V
IO
SS
must never be exceeded (see
(2)(3)
must never be exceeded. This is implicitly insured if V
SS
|
(2)
|
Voltage characteristics
Current characteristics
IN
External 3.3 V supply voltage (including V
and V
Input voltage on five volt tolerant pin
Input voltage on any other pin
Variations between different power pins
Variations between all the different ground pins
Electrostatic discharge voltage (human body
model)
< V
characteristics, and
Total current into V
Total current out of V
Output current sunk by any I/O and control pin
Output current source by any I/Os and control pin
Injected current on NRST pin
Injected current on HSE OSC_IN and LSE OSC_IN pins
Injected current on any other pin
Total injected current (sum of all I/O and control pins)
INJ(PIN)
DD
DD
SS
, V
, V
.
DD
INJ(PIN)
DDA
DDA
)
IN
value. A positive injection is induced by V
(1)
> V
) and ground (V
IN
) and ground (V
maximum cannot be respected, the injection current must be limited
DD
maximum current injection on four I/O port pins of the device.
while a negative injection is induced by V
Ratings
DD
Table 5: Current
SS
Table 6: Thermal characteristics
power lines (source)
SS
SS
ground lines (sink)
, V
, V
Ratings
(2)
SSA
SSA
) pins must always be connected to the external 3.3 V
) pins must always be connected to the external 3.3 V
(4)
(2)
characteristics). This is implicitly insured if V
DDA
IN
maximum is respected. If V
(1)
(1)
Table 4: Voltage
IN
>V
Absolute maximum ratings
DD
V
V
INJ(PIN)
(electrical sensitivity)
SS
while a negative injection is
SS
IN
see
–0.3
Min
INJ(PIN)
50
50
(4)
< V
− 0.3
− 0.3
Section 5.3.17: 12-bit ADC
Section 5.3.11:
SS
is the absolute sum of the
may cause permanent
.
value. A positive
characteristics,
V
Max.
± 25
150
150
− 25
± 5
± 5
± 5
DD
25
+5.5
STM32F103xx
Max
IN
4.0
50
50
+0.3
maximum
IN
Unit
mA
Unit
mV
V

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