STM32F100VBT6B STMicroelectronics, STM32F100VBT6B Datasheet - Page 48

MCU 32BIT 128K FLASH 100LQFP

STM32F100VBT6B

Manufacturer Part Number
STM32F100VBT6B
Description
MCU 32BIT 128K FLASH 100LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheets

Specifications of STM32F100VBT6B

Featured Product
STM32 Value Line
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
24MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
80
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
Processor Series
STM32F100x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
8 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
24 MHz
Number Of Programmable I/os
80
Number Of Timers
6
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
STM32100B-EVAL
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 16 Channel
On-chip Dac
12 bit, 2 Channel
For Use With
STM32100B-EVAL - EVAL BOARD FOR STM32F100VBT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-10659
STM32F100VBT6B

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Electrical characteristics
48/86
Table 21.
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Based on characterization, not tested in production.
3. It is recommended to use high-quality external ceramic capacitors in the 5 pF to 25 pF range (typ.),
4. The relatively low value of the RF resistor offers a good protection against issues resulting from use in a
5. t
Figure 20. Typical application with an 8 MHz crystal
1. R
Low-speed external clock generated from a crystal/ceramic resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on characterization
results obtained with typical external components specified in
the resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
Symbol
t
f
SU(HSE)
OSC_IN
C
designed for high-frequency applications, and selected to match the requirements of the crystal or
resonator. C
capacitance which is the series combination of C
included (10 pF can be used as a rough estimate of the combined pin and board capacitance) when sizing
C
humid environment, due to the induced leakage and the bias condition change. However, it is
recommended to take this point into account if the MCU is used in tough humidity conditions.
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer
C
SU(HSE)
R
g
L2
(5)
Resonator with
integrated capacitors
i
L1
EXT
L1
2
m
F
(3)
and C
value depends on the crystal characteristics.
is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
Oscillator frequency
Feedback resistor
Recommended load capacitance
versus equivalent serial
resistance of the crystal (R
HSE driving current
Oscillator transconductance
Startup time
L2
HSE 4-24 MHz oscillator characteristics
.
L1
and C
C L2
C L1
L2,
Parameter
are usually the same size. The crystal manufacturer typically specifies a load
8 MH z
resonator
R EXT (1)
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Doc ID 16455 Rev 5
S
OSC_OU T
OSC_IN
)
(4)
L1
R
V
V
load
Startup
V
R F
DD
IN
S
and C
DD
= 30
= V
= 3.3 V
Conditions
is stabilized
controlled
L2
SS
Bias
gain
. PCB and MCU pin capacitance must be
with 30 pF
(1)(2)
STM32F10xxx
Table
Min
25
f HSE
4
22. In the application,
Typ
200
30
8
2
Max
24
1
ai14128b
mA/V
MHz
Unit
mA
ms
k
pF

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