DSPIC33FJ256GP510A-I/PF Microchip Technology, DSPIC33FJ256GP510A-I/PF Datasheet - Page 320

• Manufacturer Part Number: DSPIC33FJ256GP510A-I/PF
• Description: IC MCU 16BIT 256KB FLASH 100TQFP
• Manufacturer: Microchip Technology
• Series: dsPIC™ 33Fr

Specifications of DSPIC33FJ256GP510A-I/PF

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 40 MIPs
• Connectivity: CAN, I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: AC'97, Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
• Number Of I /o: 85
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 32x10b/12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP
• Core Frequency: 40MHz
• Core Supply Voltage: 3.3V
• Embedded Interface Type: CAN, I2C, SPI, UART
• No. Of I/o's: 85
• Flash Memory Size: 256KB
• Supply Voltage Range: 3V To 3.6V
• Rohs Compliant: Yes
• Package: 100TQFP
• Device Core: dsPIC
• Family Name: dSPIC33
• Maximum Speed: 40 MHz
• Operating Supply Voltage: 3.3 V
• Data Bus Width: 16 Bit
• Number Of Programmable I/os: 85
• Interface Type: CAN/I2C/SPI/UART
• On-chip Adc: 32-chx10-bit|32-chx12-bit
• Number Of Timers: 9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

dsPIC33FJXXXGPX06A/X08A/X10A
26.1
TABLE 26-1:
TABLE 26-2:
TABLE 26-3:
TABLE 26-4:
DS70593C-page 320
High Temperature Devices
Power Dissipation:
Internal chip power dissipation:
I/O Pin Power Dissipation:
Maximum Allowed Power Dissipation
DC CHARACTERISTICS
Operating Voltage
HDC10
DC CHARACTERISTICS
Power-Down Current (I
HDC60e
HDC61c
Note 1:
Parameter
Parameter
Characteristic
No.
No.
2:
3:
4:
Operating Junction Temperature Range
High Temperature DC Characteristics
P
I/O = Σ ({V
Operating Ambient Temperature Range
INT
Base I
pulled to V
The Δ current is the additional current consumed when the module is enabled. This current should be
added to the base I
These currents are measured on the device containing the most memory in this family.
These parameters are characterized, but are not tested in manufacturing.
Supply Voltage
V
= V
Symbol
DD
DD
OPERATING MIPS VS. VOLTAGE
THERMAL OPERATING CONDITIONS
DC TEMPERATURE AND VOLTAGE SPECIFICATIONS
DC CHARACTERISTICS: POWER-DOWN CURRENT (I
PD
Typical
DD
250
x (I
is measured with all peripherals and clocks shut down. All I/Os are configured as inputs and
3
SS
- V
DD
. WDT, etc., are all switched off, and VREGS (RCON<8>) = 1.
PD
OH
- Σ I
)
} x I
Characteristic
3.0V to 3.6V
Rating
V
OH
PD
(in Volts)
DD
OH
2000
Max
)
current.
5
—
) + Σ (V
Range
OL
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature
Units
x I
μA
μA
OL
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature
)
Min
3.0
Temperature Range
-40°C to +150°C
+150°C
+150°C
(in °C)
Typ
3.3
-40°C ≤ T
Symbol
P
DMAX
Max
3.3V
3.3V
P
T
T
3.6
A
D
J
-40°C ≤ T
A
≤ +150°C for High Temperature
dsPIC33FJXXXGPX06A/X08A/X10A
Conditions
Units
Min
Base Power-Down Current
Watchdog Timer Current: ΔI
-40
-40
PD
V
A
≤ +150°C for High Temperature
)
(T
P
© 2011 Microchip Technology Inc.
INT
J
-40°C to +150°C
- T
Typ
—
—
+ P
Max MIPS
A
)/θ
I
/
20
JA
O
Conditions
+155
+150
Max
(1,3)
WDT
Unit
°C
°C
W
W
(2,4)